Abstract: The invention relates to a method for fabricating III-V semiconductor micro-optical lenses for hybrid integration with micro-optical devices, where a micro-optical lens is formed from a semiconductor wafer by selectively etching a surface of the semiconductor wafer and a lens arm is formed from the semiconductor wafer on a surface opposite the surface by selectively etching the surface of the semiconductor wafer. The lens and lens arm are then cleaved from the substrate wafer and directly mounted to a micro-optical device. As a result of using III-V semiconductor material to form micro-optical lenses for hybrid integration to micro-optical devices of the same semiconductor material, thermal expansion stability is increased and efficient transfer of light between micro-optical lenses and micro-optical devices is achieved.

Abstract: A light-emitting diode, and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid an isotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.

Abstract: A light-emitting diode and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid anisotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.

Abstract: A monolithic device, including a substrate, a semiconductor laser formed in the substrate, and a metal-insulator-semiconductor field-effect transistor (MISFET) also formed in the substrate, in such a manner as to facilitate the use of planar fabrication techniques. In a first disclosed embodiment, the device is formed on an n+ substrate and the MISFET is operated in inversion mode. In a second embodiment, an n+ substrate is also employed, but the structure includes a semi-insulating layer to confine current-carrier flow in the MISFET, which is operated in depletion mode. In a third embodiment, a semi-insulating substrate is employed, and the laser is of the buried heterostructure type.

Abstract: A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide. The high resistivity of the layer is achieved by doping it with a deep level dopant such as cobalt, in a concentration in the range of 0.6 to 1.0 atomic percent, and by purifying the growth solution to an impurity concentration of at most 1.times.10.sup.16 atoms per cubic centimeter.

Abstract: In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.