Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Embodiments of the present disclosure enable measurement of film properties, such as thickness, using reflectometry regardless of the underlying pattern on the substrate or base layer because the amount of phase shift resulting from the growing film at any wavelength is independent of the substrate or base layer. One embodiment of the method includes determining properties of the substrate from a time series data. Another embodiment of the method includes removing a plasma background for measuring data by making two consecutive measurement with a light source on and off respectively. Another embodiment includes determining a deposition start time by monitoring a plasma marker or a phase shift of optical properties.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A metrology system has an elongate stationary camera pixel array facing a workpiece transit path of a robot with an field of view corresponding to a workpiece diameter and extending transverse to the transit path portion, and a stationary elongate light emitting array generally parallel to the pixel array. An image control processor causes the camera to capture successive image frames while the robot is moving the workpiece through the transit path.

Abstract: A metrology system has an elongate stationary camera pixel array facing a workpiece transit path of a robot with an field of view corresponding to a workpiece diameter and extending transverse to the transit path portion, and a stationary elongate light emitting array generally parallel to the pixel array. An image control processor causes the camera to capture successive image frames while the, robot is moving the workpiece through the transit path.

Abstract: Effect of tilt angle, at which ions are implanted into a semiconductor layer of a wafer, is evaluated by measuring reflectance of a region which has implanted ions in first areas that are interdigitated with a corresponding number of second areas lacking the implanted ions (or having the same specie ions in a background concentration). The second areas are protected during ion implantation either by being covered up or by being in shadows, of bars located over the semiconductor layer. Due to a shadow cast by a bar, only a portion of each opening between two adjacent bars is implanted with ions to form each first area, depending on the tilt angle. Hence, tilt angle is determined e.g. from a bar's shadow's width and the bar's thickness. The bar's shadow's width in turn is determined from the width of an opening and the width of an implanted first area.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by use of only one beam of electromagnetic radiation.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation.