Abstract: An apparatus for the in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrometer device. The mass spectrometer device generates a magnetic field for directing ions of the ion implant beam of a desirable type through an aperture for implanting into a semiconductor wafer, and causing ions of undesirable type to collide with the inner or outer wall. For in-situ detection, a detector device is disposed on the inner and outer walls of the mass spectrometer for detecting the undesirable type of ions deflected. In one embodiment, the detector device comprises electronic sensor devices for detecting a concentration of the undesirable type ions which comprise undesirable elements and compounds.

Abstract: A method is presented for measuring and monitoring the mechanical stress at the device level which occurs intrinsically during the fabrication process or which is induced via extrinsic means. The method applies the fact that the current-voltage (I-V) characteristics of a diode change as the diode is subjected to mechanical stress. The method is applicable to monitoring stress at the microscopic and device levels at various stages in the semiconductor wafer fabrication process. Apparatus for implementing the method is also presented.

Abstract: A method is presented for measuring and monitoring the mechanical stress at the device level which occurs intrinsically during the fabrication process or which is induced via extrinsic means. The method applies the fact that the current-voltage (I-V) characteristics of a diode change as the diode is subjected to mechanical stress. The method is applicable to monitoring stress at the microscopic and device levels at various stages in the semiconductor wafer fabrication process. Apparatus for implementing the method is also presented.

Abstract: A method is presented for measuring and monitoring the mechanical stress at the device level which occurs intrinsically during the fabrication process or which is induced via extrinsic means. The method applies the fact that the current-voltage (I-V) characteristics of a diode change as the diode is subjected to mechanical stress. The method is applicable to monitoring stress at the microscopic and device levels at various stages in the semiconductor wafer fabrication process. Apparatus for implementing the method is also presented.

Abstract: A modular enclosure for use as a hunting blind, an ice fishing shelter, and wildlife observatory or the like. The enclosure comprises a plurality of rigid, insulated panels installed in a frame assembly to form a front wall, a back wall, spaced apart end walls, a roof and a floor. The frame assembly comprises a plurality of track members mounted the roof and the floor, and configured to receive the top and bottom edges of the wall panels. The enclosure further comprises at least one opening or port in the nature of a window, a door, and a plurality of handles mounted to the exterior to facilitate transport of the enclosure. A sun visor is mounted to the exterior of the enclosure above the at least one opening. A bench is mounted in the interior of the enclosure at a position immediately below the at least one opening for supporting a firearm. A storage shelf may also be provided in the interior of the enclosure. Skis may be mounted to the enclosure to facilitate transport of the enclosure over icy surfaces.