Abstract: A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is substantially eliminated by making the confining enclosure in several, typically four, electrically isolated portions, namely, the cathode support portion, the anode support portion and a pair of plasma support portions. In the structure described there is avoided the relatively large potential difference between the confinement enclosure and the plasma, which occurs predominantly at the anode support end of the confining enclosure of prior art one-piece apparatus. This portion of the apparatus has been found to be the major source of unwanted sputtering therein.

Abstract: An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer to react the platinum and the silicon such that the interface between the platinum-silicide and the silicon penetrates beyond the peak depth of the implant, some of the encountered dopant ions being accumulated at the advancing interface in snowplow fashion. There results a narrowed and concentrated layer of implanted ions localized just below the interface of the silicide and the silicon. The presence of this layer permits conduction in the forward direction at lower applied voltages without substantially degrading the reverse blocking characteristics.

Abstract: An attenuating member comprising a plurality of passages like a tube nest, is positioned between the electrodes of a diode sputter-etching system and close or next to the anode. The passages of the attenuating member are parallel to the direct path between the electrodes and have a length appreciably greater than their maximum width. A bias on the attenuating member tends to cause secondary electrons emitted by ion bombardment at the cathode to pass through the attenuating member with a minimum of collisions. Upon striking the anode, X-rays generated at the anode by the collision of the secondary electrons are inhibited from traveling back to the workpiece by the interposition of the attenuating member. The arrangement is important in the fabrication of surface-sensitive devices such as MOS devices in which the impingement of even low energy X-rays may affect critical operating parameters, in particular, the threshold voltage.