Abstract: Methods for generating a set of parameters and an associated methodology that model a portion of the variation in a number of sensor-specific correction matrices. The parameters are fewer than the number of elements in one of the sensor-specific correction matrices yet adequately model variations in the IC manufacturing process used to fabricate color image sensors. Storage circuitry aboard an IC die containing the sensor can be configured to store the parameters.

Abstract: A liquid crystal color filter may include an infrared blocking. dye integrated within the filter to prevent infrared radiation from adversely affecting the performance of the filter when used in an imaging system. The dye may be incorporated into a liquid crystal element in the filter or may be coated on components thereof. Suitable dyes are transmissive of light in the visible range and substantially absorbent of light in the infrared range from approximately 800 nm to 1200 nm in wavelength.

Abstract: A system includes a transmission line, a driver, a load, a compensation capacitor and a compensation resistor. An output terminal of the driver is coupled to one end of the transmission line, and the load is coupled to the other end of the transmission line. The compensation capacitor is coupled in parallel with the output terminal of the driver, and the compensation resistor is coupled in series between the other end of the transmission line and the load.

Abstract: A pixel structure of an image sensor, the pixel structure for providing sensor signals in response to incident light is provided. The pixel structure includes light selective elements, the light selective elements having predetermined thicknesses to absorb only light having wavelengths corresponding to the visible region of the light spectrum.

Abstract: A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substrate. The pixel has a first relative responsivity. A light shield is disposed above the substrate to modulate the pixel color responsivity. The light shield forms an aperture whose area is substantially equal to the light receiving area adjusted by a reduction factor. The reduction factor is the result of an arithmetic operation between the first relative responsivity and a second relative responsivity, associated with a second pixel of a second color.

Abstract: A infrared pixel sensor comprising a pixel circuit and a composite infrared pass filter comprising a plurality of filters, wherein each filter belonging to the plurality of filters are substantially transparent to infrared radiation and have a visible pass spectrum so that the composite infrared pass filter is substantially opaque to visible light. Signals from infrared pixel sensors are subtracted from color pixel sensors to correct for infrared radiation in the image signal without the need for an infrared blocking filter.

Abstract: A liquid crystal color filter may include an infrared blocking dye integrated within the filter to prevent infrared radiation from adversely affecting the performance of the filter when used in an imaging system. The dye may be incorporated into a liquid crystal element in the filter or may be coated on components thereof. Suitable dyes are transmissive of light in the visible range and substantially absorbent of light in the infrared range from approximately 800 nm to 1200 nm in wavelength.

Abstract: A method and apparatus for color calibrating an imager device is disclosed. The imager device is subjected to a plurality of light sources. Color channel responses are obtained from the imager device and the color calibrating coefficients are determined.

Abstract: An image sensing device including a package having opposing side portions, an imaging sensor having a top side portion, and a light selective element coupled to the opposing side portions and overlying the top side portion of the imaging sensor.

Abstract: An image sensing device including an imaging sensor, a package having opposing side portions, and an infrared light selective element coupled to the opposing side portions and overlying a top side portion of the imaging sensor, the selective element including a plastic element and a dye.

Abstract: An imaging system having an imaging sensor providing sensor signals in response to incident light and control signals, control circuitry configured to generate control signals for controlling said imaging sensor, signal processing circuitry for generating image data in response to said sensor signals, and a light selective element for selecting the incident light encountered by said imaging sensor, the light selective element comprising an ionically-colored glass having a surface that is treated with a chemical stabilizer.

Abstract: The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.

Abstract: A method of making and using a target to verify an image from an imaging device is provided. A target is formed with a set of color patches that have numerically valued color characteristics. The color patches are repeated throughout the target as to permit verification of colors as a function of position of the color patches with respect to the target. A set of markers are provided to facilitate machine recognition of the target such that each position of the color patches may be referenced relative to the set of markers.

Abstract: A method of adjusting a portion of a dark frame in accordance with compensation values related to dark reference pixels of a picture frame to obtain an adjusted dark frame portion, and then subtracting the adjusted dark frame portion from a corresponding picture frame portion. The technique may be used to improve the accuracy of image sensors such as those used in digital cameras or video conferencing cameras by compensating for dark current noise. The technique may be applied to both CMOS image sensors and, in general, to any image sensors requiring dark frame subtraction. The techniques may also be used in conjunction with calibration of image sensors and imaging systems.

Abstract: A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substrate. The pixel has a first relative responsivity. A light shield is disposed above the substrate to modulate the pixel color responsivity. The light shield forms an aperture whose area is substantially equal to the light receiving area adjusted by a reduction factor. The reduction factor is the result of an arithmetic operation between the first relative responsivity and a second relative responsivity, associated with a second pixel of a second color.

Abstract: A microscope enables selective illumination using infrared or visible spectrum light. The image captured by a sensor array within the microscope may be displayed on a computer display. Some objects appear differently when exposed to infrared as opposed to visible radiation.

Abstract: An image sensor having a well-to-substrate diode as the photodetector. In a preferred embodiment, a modern salicided (CMOS) process is utilized to manufacture the image sensor. The field oxide region above the diode junction is transparent to visible light, thus allowing the photodiode competitive quantum efficiency as compared to devices having source/drain diffusion-to-substrate photodiodes fabricated on a non-salicided process. The photodiode can be integrated as part of a sensor array with digital circuitry using a relatively unmodified digital CMOS process. Furthermore, the structure allows the optical properties of the photodiode to be engineered by modifying the well without deleterious effects, to approximate a first order, on the characteristics of a FET built in another identical well.

Abstract: An image sensing device including a package having opposing side portions, an imaging sensor having a top side portion, and a light selective element coupled to the opposing side portions and overlying the top side portion of the imaging sensor.

Abstract: A color imaging device of a plurality of light selective elements. The light selective elements include a first light selective element selective to light having a wavelength corresponding to the Magenta region of the spectrum, a second light selective element selective to light having a wavelength corresponding to the White region of the spectrum, and a third light selective element selective to light having a wavelength corresponding to the Yellow region of the spectrum.

Abstract: A process for enhanced formation of vias in multilevel conductive structures for integrated circuit devices. A semiconductor wafer, bearing a multilayered first level metalization characterized by a tungsten alloy top layer, is annealed in a suitable ambient so as to form a distinctly colored superficial film atop the first level metalization. The interlevel dielectric is then deposited and subsequently selectively dry etched until the film becomes discernible, the film itself serving as an etch stop so as to protect the top layer of the first level metalization. Exposed portions of the superficial film are then removed through a standard plasma etch step. Remaining areas of the film promote intimate binding between the first level metalization and the interlevel dielectric.