Abstract: A method of establishing a lot grading system for lots in a semiconductor manufacturing process includes defining a new lot grade for at least one lot in the semiconductor manufacturing process. The at least one lot is has a current lot grade and the new lot grade is dependent upon the current lot grade. The new lot grade is saved in a grading referenced database and the at least one lot in the semiconductor manufacturing process is updated with the new lot grade.

Abstract: A method of establishing a lot grading system for lots in a semiconductor manufacturing process includes defining a new lot grade for at least one lot in the semiconductor manufacturing process. The at least one lot is has a current lot grade and the new lot grade is dependent upon the current lot grade. The new lot grade is saved in a grading referenced database and the at least one lot in the semiconductor manufacturing process is updated with the new lot grade.

Abstract: A method for circuit modification of an microelectronic chip having at least one conductor in an organic dielectric, includes applying a protective inorganic surface layer on top of the organic dielectric, forming at least one window in the protective inorganic surface layer to selectively expose the underlying organic dielectric, etching the organic dielectric in the window area to selectively remove the organic dielectric adjacent to the conductor, and performing at least one process that modifies the conductor.

Abstract: A method for circuit modification of an microelectronic chip having at least one conductor in an organic dielectric, includes applying a protective inorganic surface layer on top of the organic dielectric, forming at least one window in the protective inorganic surface layer to selectively expose the underlying organic dielectric, etching the organic dielectric in the window area to selectively remove the organic dielectric adjacent to the conductor, and performing at least one process that modifies the conductor.

Abstract: A method for circuit modification of an microelectronic chip having at least one conductor in an organic dielectric, includes applying a protective inorganic surface layer on top of the organic dielectric, forming at least one window in the protective inorganic surface layer to selectively expose the underlying organic dielectric, etching the organic dielectric in the window area to selectively remove the organic dielectric adjacent to the conductor, and performing at least one process that modifies the conductor.

Abstract: A method for circuit modification of an microelectronic chip having at least one conductor in an organic dielectric, includes applying a protective inorganic surface layer on top of the organic dielectric, forming at least one window in the protective inorganic surface layer to selectively expose the underlying organic dielectric, etching the organic dielectric in the window area to selectively remove the organic dielectric adjacent to the conductor, and performing at least one process that modifies the conductor.

Abstract: Silazanes and related compounds are prepared by providing a precursor containing one or more cyclic silazane units, causing polymerization to occur in the presence of a transition metal catalyst to form a polysilazane product. Further products may result from additional reaction. The novel compounds may be pyrolyzed to yield ceramic materials such as silicon nitride, silicon carbide and mixtures thereof. In a preferred embodiment, substantially pure silicon nitride and articles prepared therefrom are provided. Fibers, coatings, binders and the like may be prepared from the novel materials.

Abstract: Silazanes and related compounds are prepared by providing a precursor containing one or more cyclic silazane units, causing polymerization to occur in the presence of a transition metal catalyst to form a polysilazane product. Further products may result from additional reaction. The novel compounds may be pyrolyzed to yield ceramic materials such as silicon nitride, silicon carbide and mixtures thereof. In a preferred embodiment, substantially pure silicon nitride and articles prepared therefrom are provided. Fibers, coatings, binders and the like may be prepared from the novel materials.