Abstract: A method for electroplating a layer of a precious metal, copper or aluminum on a surface of a semiconductor device, an integrated circuit, or the like employs an electrolytic cell in which the cathode comprises a semiconductor device, an integrated circuit device, or the like, having a surface for receiving the precious metal layer. The surface is oriented in a position normal to a vector representing the acceleration of gravity and facing the anode of the cell. An electroplating direct current on the order of about 0.1 milliamp/cm.sup.2 is employed while superimposing a time varying electromagnetic field in the range of about 1 to about 100 megahertz on the direct current. The electroplating current and the electromagnetic field are employed in the absence of convection, i.e. stirring, in the electrolyte. The product produced by the described method comprises a smooth, evenly distributed layer of the precious metal having a microstructure that is characteristic of single crystals.