Abstract: Devices and methods for non-dispersive infrared (NDIR) sensing are disclosed. In one aspect, a non-dispersive infrared sensor is disclosed which, in one embodiment includes a nanophotonic infrared emitting metamaterial (NIREM) emitter configured to selectively emit radiation corresponding to a respective vibrational resonance frequency for each of a plurality of different analytes of interest. The broadband detector can be configured to detect photons associated with vibrational resonance of each of the plurality of analytes of interest in response to the emitted radiation from the NIREM emitter, in order to determine properties of one or more of the analytes of interest.

Abstract: A device includes a substrate having a pattern of surface features on a surface thereof, and a layer including a material having an Epsilon-Near-Zero (ENZ) condition for a wavelength range. The layer extends on the surface of the substrate and along the pattern of surface features. Related devices and fabrication methods are also discussed.

Abstract: A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

Abstract: A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.

Abstract: Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.

Abstract: A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

Abstract: Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.

Abstract: A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.