Abstract: A novel polymer positive temperature coefficient (PPTC) material, device, and method of fabrication. One example of polymer positive temperature coefficient (PPTC) includes a polymer matrix, the polymer matrix comprising a first polymer. The PPTC material may further include a conductive filler, disposed in the polymer matrix; and at least one polymer filler, dispersed within the polymer matrix. The at least one polymer filler may comprise a second polymer, different from the first polymer, wherein the at least one polymer comprises a first melting temperature, and wherein the second polymer comprises a second melting temperature, the second melting temperature exceeding the first melting temperature by at least 20 C.

Abstract: A device may include an inner layer comprising a polyvinylidene fluoride (PVDF) material. The device may also include a first interface layer, disposed on a first side of the inner layer, and a second interface layer, disposed on a second side of the inner layer. The first interface layer and the second interface layer may comprise a mixture of PVDF material and a scavenger component.

Abstract: A novel polymer positive temperature coefficient (PPTC) material, device, and method of fabrication. One example of polymer positive temperature coefficient (PPTC) includes a polymer matrix, the polymer matrix comprising a first polymer. The PPTC material may further include a conductive filler, disposed in the polymer matrix; and at least one polymer filler, dispersed within the polymer matrix. The at least one polymer filler may comprise a second polymer, different from the first polymer, wherein the at least one polymer comprises a first melting temperature, and wherein the second polymer comprises a second melting temperature, the second melting temperature exceeding the first melting temperature by at least 20 C.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A device may include an inner layer comprising a polyvinylidene fluoride (PVDF) material. The device may also include a first interface layer, disposed on a first side of the inner layer, and a second interface layer, disposed on a second side of the inner layer. The first interface layer and the second interface layer may comprise a mixture of PVDF material and a scavenger component.

Abstract: Conductive composite compositions and circuit protection devices including a conductive composite composition are disclosed. The conductive composite composition includes a polymer material, a plurality of conductive particles, and a high melting point additive. The high melting point additive comprises at least 1% of the conductive composite, by volume of the total composition. The circuit protection device includes a body portion comprising a conductive composite composition, the conductive composite composition comprising a polymer material, a plurality of conductive particles, and at least 1%, by volume, of a high melting point additive loaded in the polymer material, and leads extending from the body portion, the leads arranged and disposed to electrically couple the circuit protection device to an electrical system. Also provided is a method of forming a conductive composite.

Abstract: Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants are provided herein. In an embodiment, a borate ester comprises boron and silicon wherein the boron is linked to the silicon by alkyl groups that are bonded via ester bonds with both the boron and the silicon. A method of fabricating a boron-comprising dopant comprises providing a borate and transesterifying the borate using a polyol-substituted silicon monomer.

Abstract: Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants are provided herein. In an embodiment, a borate ester comprises boron and silicon wherein the boron is linked to the silicon by alkyl groups that are bonded via ester bonds with both the boron and the silicon. A method of fabricating a boron-comprising dopant comprises providing a borate and transesterifying the borate using a polyol-substituted silicon monomer.

Abstract: Compositions and methods for the removal of patterned photodefinable materials, such as photoresists and/or photoimageable dielectric materials, from substrates are provided. Such compositions and methods are useful in the manufacture of electronic devices. Methods of reworking electronic device substrates by removing patterned photodefinable material from an underlying organic film are also provided.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: Disclosed are compositions and methods for improving compatibility of imaging layers with dielectric layers. Also disclosed are methods of reducing or eliminating poisoning of photoresists during electronic device manufacture.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: Disclosed are compositions useful for removing antireflective compositions from a substrate. Also disclosed are methods of removing antireflective compositions from a substrate using such compositions.

Abstract: Photodefineable cyclobutarene compositions are disclosed. These polymer compositions are useful in composites, laminates, membranes, films, adhesives, coatings, and electronic applications such as multichip modules and printed circuit boards. An example of such photodefineable cyclobutarene compositions is a mixture of a photosensitive agent such as 2,6-bis(4-azidobenzylidene)-4-methylcyclohexanone and a cyclobutarene such as oligomeric divinyltetramethyldisiloxane bisbenzocyclobutane.

Abstract: A photocurable formulation containing a partially polymerized DVS resin formed by heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at an initial concentration of DVS monomer in the solvent of from about 12 to about 32 weight percent. This photocurable formulation may be used as an interlayer dielectric to fabricate thin film multichip modules.

Abstract: A process for forming a partially polymerized DVS resin comprising heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at a concentration of DVS monomer in the solvent such that:(a) the DVS resin, when applied and polymerized in a thin layer on a solid substrate does not craze; and(b) the DVS resin, is rendered photocurable by the addition of at least one photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation and the film retention upon development with a solvent is at least 50 percent. The DVS resin may be used as an interlayer dielectric to fabricate thin film multichip modules.

Abstract: An oligomerized cyclobutarene containing 80 weight percent or more of oligomers of a degree of polymerization of three or more.