Patents by Inventor Edward William Kiewra
Edward William Kiewra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10014377Abstract: An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first III-V semiconductor material area present in a trench in the dielectric layer, wherein a via of the III-V semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a second III-V semiconductor material area present in the trench in the dielectric layer wherein the second III-V semiconductor material area does not have a via extending through the dielectric layer into contact with the base semiconductor layer; and a semiconductor device present on the second III-V semiconductor material area, wherein the first III-V semiconductor material area and the second III-V semiconductor material area are separated by a low aspect ratio trench extending to the dielectric layer.Type: GrantFiled: February 27, 2017Date of Patent: July 3, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Cheng-Wei Cheng, Edward William Kiewra, Amlan Majumdar, Devendra K. Sadana, Kuen-Ting Shiu, Yanning Sun
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Patent number: 9704958Abstract: An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first III-V semiconductor material area present in a trench in the dielectric layer, wherein a via of the III-V semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a second III-V semiconductor material area present in the trench in the dielectric layer wherein the second III-V semiconductor material area does not have a via extending through the dielectric layer into contact with the base semiconductor layer; and a semiconductor device present on the second III-V semiconductor material area, wherein the first III-V semiconductor material area and the second III-V semiconductor material area are separated by a low aspect ratio trench extending to the dielectric layer.Type: GrantFiled: December 18, 2015Date of Patent: July 11, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Cheng-Wei Cheng, Edward William Kiewra, Amlan Majumdar, Devendra K. Sadana, Kuen-Ting Shiu, Yanning Sun
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Publication number: 20170179237Abstract: An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first III-V semiconductor material area present in a trench in the dielectric layer, wherein a via of the III-V semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a second semiconductor material area present in the trench in the dielectric layer wherein the second III-V semiconductor material area does not have a via extending through the dielectric layer into contact with the base semiconductor layer; and a semiconductor device present on the second III-V semiconductor material area, wherein the first III-V semiconductor material area and the second III-V semiconductor material area are separated by a low aspect ratio trench extending to the dielectric layer.Type: ApplicationFiled: February 27, 2017Publication date: June 22, 2017Inventors: CHENG-WEI CHENG, EDWARD WILLIAM KIEWRA, AMLAN MAJUMDAR, DEVENDRA K. SADANA, KUEN-TING SHIU, YANNING SUN
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Publication number: 20170179238Abstract: An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first III-V semiconductor material area present in a trench in the dielectric layer, wherein a via of the III-V semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a second semiconductor material area present in the trench in the dielectric layer wherein the second III-V semiconductor material area does not have a via extending through the dielectric layer into contact with the base semiconductor layer; and a semiconductor device present on the second III-V semiconductor material area, wherein the first III-V semiconductor material area and the second III-V semiconductor material area are separated by a low aspect ratio trench extending to the dielectric layer.Type: ApplicationFiled: December 18, 2015Publication date: June 22, 2017Inventors: CHENG-WEI CHENG, EDWARD WILLIAM KIEWRA, AMLAN MAJUMDAR, DEVENDRA K. SADANA, KUEN-TING SHIU, YANNING SUN
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Patent number: 8610172Abstract: Techniques for employing different channel materials within the same CMOS circuit are provided. In one aspect, a method of fabricating a CMOS circuit includes the following steps. A wafer is provided having a first semiconductor layer on an insulator. STI is used to divide the first semiconductor layer into a first active region and a second active region. The first semiconductor layer is recessed in the first active region. A second semiconductor layer is epitaxially grown on the first semiconductor layer, wherein the second semiconductor layer comprises a material having at least one group III element and at least one group V element. An n-FET is formed in the first active region using the second semiconductor layer as a channel material for the n-FET. A p-FET is formed in the second active region using the first semiconductor layer as a channel material for the p-FET.Type: GrantFiled: December 15, 2011Date of Patent: December 17, 2013Assignee: International Business Machines CorporationInventors: Dechao Guo, Shu-Jen Han, Edward William Kiewra, Kuen-Ting Shiu
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Publication number: 20130153964Abstract: Techniques for employing different channel materials within the same CMOS circuit are provided. In one aspect, a method of fabricating a CMOS circuit includes the following steps. A wafer is provided having a first semiconductor layer on an insulator. STI is used to divide the first semiconductor layer into a first active region and a second active region. The first semiconductor layer is recessed in the first active region. A second semiconductor layer is epitaxially grown on the first semiconductor layer, wherein the second semiconductor layer comprises a material having at least one group III element and at least one group V element. An n-FET is formed in the first active region using the second semiconductor layer as a channel material for the n-FET. A p-FET is formed in the second active region using the first semiconductor layer as a channel material for the p-FET.Type: ApplicationFiled: December 15, 2011Publication date: June 20, 2013Applicant: International Business Machines CorporationInventors: Dechao Guo, Shu-Jen Han, Edward William Kiewra, Kuen-Ting Shiu
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Patent number: 7119545Abstract: A method and apparatus for detecting metal extrusion associated with electromigration (EM) under high current density situations within an EM test line by measuring changes in capacitance associated with metal extrusion that occurs in the vicinity of the charge carrying surfaces of one or more capacitors situated in locations of close physical proximity to anticipated sites of metal extrusion on an EM test line are provided. The capacitance of each of the one or more capacitors is measured prior to and then during or after operation of the EM test line so as to detect capacitance changes indicating metal extrusion.Type: GrantFiled: September 29, 2004Date of Patent: October 10, 2006Assignee: International Business Machines CorporationInventors: Ishtiaq Ahsan, Ronald Gene Filippi, Roy Charles Iggulden, Edward William Kiewra, Ping-Chuan Wang
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Patent number: 6444565Abstract: A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.Type: GrantFiled: June 29, 2001Date of Patent: September 3, 2002Assignee: International Business Machines CorporationInventors: Christopher Adam Feild, Roy Charles Iggulden, Rajiv Vasant Joshi, Edward William Kiewra
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Patent number: 6433436Abstract: A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.Type: GrantFiled: May 26, 1999Date of Patent: August 13, 2002Assignee: International Business Machines CorporationInventors: Christopher Adam Feild, Roy Charles Iggulden, Rajiv Vasant Joshi, Edward William Kiewra
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Patent number: 5670018Abstract: A back end of the line dry etch method is disclosed. Etching of a mask oxide and temporary (sacrificial) silicon mandrel occurs following the formation of gate stacks and tungsten studs. The mask oxide is etched selectively to tungsten and silicon through the use of a polymerizing oxide etch. The silicon is etched selectively to both silicon nitride, silicon oxide, and tungsten. The process removes the silicon mandrel and associated silicon residual stringers by removing backside helium cooling, while using HBr as the single species etchant, and by adjusting the duration, the pressure, and the electrode gaps during the silicon etch process. The silicon may be undoped polysilicon, doped polysilicon, or single crystal silicon.Type: GrantFiled: April 27, 1995Date of Patent: September 23, 1997Assignees: Siemens Aktiengesellschaft, International Business Machines CorporationInventors: Elke Eckstein, Birgit Hoffman, deceased, Edward William Kiewra, Waldemar Walter Kocon, Marc Jay Weiss