Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: X-ray fluorescence (XRF) monitoring of characteristic peaks while etching thin-film layers can reveal coverage defects and thickness nonuniformity in the top film. To measure coverage and uniformity while screening candidate layer materials and processes, the candidate layers may be formed above an underlayer of a different composition. A wet etchant that selectively etches the underlayer faster than the candidate layer is applied to the candidate layer, and the XRF spectrum is monitored. Pinholes, cracks, islands, and nonuniform thickness in the candidate layer produce characteristic features in the time-dependent behavior of XRF peaks from the underlayer and/or the candidate layer. “Etch/XRF” tests can be used to rapidly and objectively identify the most uniform contiguous candidate layers to advance to further screening or production. XRF may also be calibrated against a known thickness indicator to detect the approach of a desired endpoint in an etch process.

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

Abstract: X-ray fluorescence (XRF) monitoring of characteristic peaks while etching thin-film layers can reveal coverage defects and thickness nonuniformity in the top film. To measure coverage and uniformity while screening candidate layer materials and processes, the candidate layers may be formed above an underlayer of a different composition. A wet etchant that selectively etches the underlayer faster than the candidate layer is applied to the candidate layer, and the XRF spectrum is monitored. Pinholes, cracks, islands, and nonuniform thickness in the candidate layer produce characteristic features in the time-dependent behavior of XRF peaks from the underlayer and/or the candidate layer. “Etch/XRF” tests can be used to rapidly and objectively identify the most uniform contiguous candidate layers to advance to further screening or production. XRF may also be calibrated against a known thickness indicator to detect the approach of a desired endpoint in an etch process.

Abstract: Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The first layer includes tantalum. A second layer is formed above the first layer. The second layer includes manganese. A third layer is formed above the second layer. The third layer includes copper.

Abstract: The present invention discloses a cleaning process, utilizing a gas flow to an interior of a hollow object in a fluid ambient. After capping the object to seal off the interior volume, gas is introduced to the object interior. The pressure is built up within the object interior, loosening the seal. The gas pressure is released, and the seal returns. The vibration caused by the cycling of gas pressure can be used to perform cleaning of particles adhering to the object. The cleaning process can be used in a combinatorial processing system, enabling in-situ cleaning of process reactor assemblies.

Abstract: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 ? thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets.

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract: A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: A system for combinatorial processing is provided. The system includes a plurality of reactor cells. Each of the plurality of reactor cells includes a vertical recess extending along a length of the outer surface of the plurality of reactor cells. The vertical recess is operable to receive a vertical rail. The system also includes a plurality of horizontal rails extending between rows of the plurality of reactor cells. Each of the plurality of horizontal rails has a member slidably mounted thereon. The member is coupled to the vertical rail thereby enabling independent horizontal and vertical movement for each of the plurality of reactor cells.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: A system for combinatorial processing is provided. The system includes a plurality of reactor cells. Each of the plurality of reactor cells includes a vertical recess extending along a length of the outer surface of the plurality of reactor cells. The vertical recess is operable to receive a vertical rail. The system also includes a plurality of horizontal rails extending between rows of the plurality of reactor cells. Each of the plurality of horizontal rails has a member slidably mounted thereon. The member is coupled to the vertical rail thereby enabling independent horizontal and vertical movement for each of the plurality of reactor cells.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

Abstract: The present invention discloses a cleaning process, utilizing a gas flow to an interior of a hollow object in a fluid ambient. After capping the object to seal off the interior volume, gas is introduced to the object interior. The pressure is built up within the object interior, loosening the seal. The gas pressure is released, and the seal returns. The vibration caused by the cycling of gas pressure can be used to perform cleaning of particles adhering to the object. The cleaning process can be used in a combinatorial processing system, enabling in-situ cleaning of process reactor assemblies.

Abstract: A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water.