Abstract: Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transistor, and/or between the drain and ground, etc. In certain exemplary embodiments, the amplifier may be a cascode amplifier. Further aspects for effectively dealing with ESD phenomena are described.

Abstract: An apparatus includes a first amplification stage configured to amplify a first carrier signal and a second amplification stage configured to amplify a second carrier signal. The first amplification stage is direct-current (DC) coupled to the second amplification stage. First circuitry is coupled to the first amplification stage and configured to control a first gain of the first amplification stage. The first circuitry includes a first gain control transistor configured to selectively divert a first bleed current from a first output of the first amplification stage. Second circuitry is coupled to the second amplification stage and configured to control a second gain of the second amplification stage independently of the first gain. The second circuitry includes a second gain control transistor configured to selectively divert a second bleed current from a second output of the second amplification stage.

Abstract: A device includes at least one first amplifier circuit configurable to receive and amplify an input radio frequency (RF) signal having a first carrier at a first input signal level and provide a first amplified RF signal, and at least one second amplifier circuit configurable to receive and amplify the input RF signal having a second carrier at a second input signal level and provide a second amplified RF signal, the at least one first amplifier circuit having a first input impedance, the at least one second amplifier circuit having a second input impedance.

Abstract: A device includes an amplifier circuit comprising a plurality of amplification paths, and at least one switchable bypass capacitance coupled to an associated shared power distribution network, the at least one switchable bypass capacitance and at least one of the plurality of amplification paths responsive to a control signal configured to selectively ground the at least one switchable bypass capacitance and selectively enable the at least one of the amplification paths based on a selected operating mode.

Abstract: A device includes a first amplifier circuit coupled to a first transformer and a second transformer, the first transformer selectively coupled to a first shared power distribution network through a first switch, the second transformer selectively coupled to a second shared power distribution network through a second switch.

Abstract: Techniques for routing and shielding signal lines to improve isolation between the signal lines are disclosed. In an exemplary design, an apparatus includes first, second, and third signal lines and a switch. The first, second, and third signal lines are configurable to carry first, second, and third signals, respectively. The switch is coupled between the second signal line and AC ground and is closed when the second signal line is not carrying the second signal. The second signal line isolates the first and third signal lines when the switch is closed. Adjacent signal lines are not active at the same time. A signal line may include positive and negative signal lines, which may have at least one cross over in order to cancel coupling between the positive and negative signal lines.

Abstract: An apparatus includes a first amplification stage configured to amplify a first carrier signal and a second amplification stage configured to amplify a second carrier signal. The first amplification stage is direct-current (DC) coupled to the second amplification stage. First circuitry is coupled to the first amplification stage and configured to control a first gain of the first amplification stage. The first circuitry includes a first gain control transistor configured to selectively divert a first bleed current from a first output of the first amplification stage. Second circuitry is coupled to the second amplification stage and configured to control a second gain of the second amplification stage independently of the first gain. The second circuitry includes a second gain control transistor configured to selectively divert a second bleed current from a second output of the second amplification stage.

Abstract: A device includes at least one first amplifier circuit configurable to receive and amplify an input radio frequency (RF) signal having a first carrier at a first input signal level and provide a first amplified RF signal, and at least one second amplifier circuit configurable to receive and amplify the input RF signal having a second carrier at a second input signal level and provide a second amplified RF signal, the at least one first amplifier circuit having a first input impedance, the at least one second amplifier circuit having a second input impedance.

Abstract: A device includes an amplifier circuit comprising a plurality of amplification paths, and at least one switchable bypass capacitance coupled to an associated shared power distribution network, the at least one switchable bypass capacitance and at least one of the plurality of amplification paths responsive to a control signal configured to selectively ground the at least one switchable bypass capacitance and selectively enable the at least one of the amplification paths based on a selected operating mode.

Abstract: A device includes a first and a second low noise amplifier (LNA), a first degenerative inductance coupled between the first LNA and ground by a first ground connection, and a second degenerative inductance coupled between the second LNA and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances.

Abstract: A device includes a first and a second low noise amplifier (LNA), a first degenerative inductance coupled between the first LNA and ground by a first ground connection, and a second degenerative inductance coupled between the second LNA and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances.

Abstract: A device includes a first amplifier circuit coupled to a first transformer and a second transformer, the first transformer selectively coupled to a first shared power distribution network through a first switch, the second transformer selectively coupled to a second shared power distribution network through a second switch.

Abstract: Techniques for improving electro-static discharge (ESD) performance in integrated circuits (IC's). In an aspect, one or more protective diodes are provided between various nodes of the IC. For example, protective diode(s) may be provided between the drain and gate of an amplifier input transistor, and/or between the drain and ground, etc. In certain exemplary embodiments, the amplifier may be a cascode amplifier. Further aspects for effectively dealing with ESD phenomena are described.

Abstract: Amplifiers with multiple outputs and separate gain control per output are disclosed. In an exemplary design, an apparatus (e.g., a wireless device or an integrated circuit) may include first and second amplifier circuits. The first amplifier circuit may receive and amplify an input radio frequency (RF) signal based on a first variable gain and provide a first amplified RF signal. The second amplifier circuit may receive and amplify the input RF signal based on a second variable gain and provide a second amplified RF signal. The input RF signal may include a plurality of transmitted signals being received by the wireless device. The first variable gain may be adjustable independently of the second variable gain. Each variable gain may be set based on the received power level of at least one transmitted signal being received by the wireless device.