Abstract: Provided is a multi-function radar apparatus capable of measuring both a distance to a target object and a temperature of the target object with high accuracy. A transmission signal produced from a high-frequency signal generating unit (9) is amplified by a transmission signal amplifying unit (12) while intermittently stopped by a transmission intermittent stop switch (11), and is emitted to a target object (13) via a circulator unit (2). A reflected wave from the target object (13) is input as a reception signal to a transmitting and receiving antenna (1) while the transmission signal is emitted, and a radiated wave from the target object (13) is input as the reception signal thereto while the transmission signal is not emitted. The reception signal is amplified by a reception signal amplifying unit (3) via the circulator unit (2), and is mixed by a frequency converting unit (4) with the transmission signal branched by a high-frequency signal branching unit (10) to thereby generate a beat signal.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: Provided is a multi-function radar apparatus capable of measuring both a distance to a target object and a temperature of the target object with high accuracy. A transmission signal produced from a high-frequency signal generating unit (9) is amplified by a transmission signal amplifying unit (12) while intermittently stopped by a transmission intermittent stop switch (11), and is emitted to a target object (13) via a circulator unit (2). A reflected wave from the target object (13) is input as a reception signal to a transmitting and receiving antenna (1) while the transmission signal is emitted, and a radiated wave from the target object (13) is input as the reception signal thereto while the transmission signal is not emitted. The reception signal is amplified by a reception signal amplifying unit (3) via the circulator unit (2), and is mixed by a frequency converting unit (4) with the transmission signal branched by a high-frequency signal branching unit (10) to thereby generate a beat signal.

Abstract: In a radio-frequency wave module including a transmission path based on a distributed parameter element, the transmission path being part of an input/output terminal, a plurality of cavity-structured concave portions for containing semiconductor-including mounted components therein, grounding-use metallic electrodes, dielectric substrates of at least two or more layers, and semiconductors, electrical separation is established between the grounding-use metallic electrodes which form the transmission paths based on the distributed parameter element and at least one of the grounding-use metallic electrodes which are formed on bottom surfaces of the plurality of cavity-structured concave portions for containing the semiconductor-including mounted components therein.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a radio-frequency wave module including a transmission path based on a distributed parameter element, the transmission path being part of an input/output terminal, a plurality of cavity-structured concave portions for containing semiconductor-including mounted components therein, grounding-use metallic electrodes, dielectric substrates of at least two or more layers, and semiconductors, electrical separation is established between the grounding-use metallic electrodes which form the transmission paths based on the distributed parameter element and at least one of the grounding-use metallic electrodes which are formed on bottom surfaces of the plurality of cavity-structured concave portions for containing the semiconductor-including mounted components therein.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A package structure having a recessed portion for accommodating an electronic component for inputting and outputting high-frequency signals such as a semiconductor device while preventing unwanted resonance and increases in loss of the high-frequency signals. Transmission lines for inputting and outputting high-frequency signals to and from the electronic component are formed on a dielectric substrate. Electrode lines for grounding are formed over the dielectric substrate adjacently to the transmission lines. The front ends of the electrode lines for grounding which face the recessed portion are connected with a metal enclosure for grounding via conductors in through-holes.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A high frequency switch circuit device includes: at least one distributed element of at least one transmission line; at least two lumped elements of at least one resistor and at least one capacitor; at least one semiconductor device; at least one input terminal; at least two output terminals; and another transmission line, having an open end or a short-circuited end, connected to the input terminal. A total length of the input terminal and said another transmission line is set to be about an integer times ?/2 in case the transmission line has the open end and about an integer times (?/4+?/2) in case the transmission line has the short-circuited end. One of the output terminals is used as an input port to which a signal is inputted, and another one of the output terminals is used as an output port from which a signal is outputted.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A high frequency switch circuit device includes: at least one distributed element of at least one transmission line; at least two lumped elements of at least one resistor and at least one capacitor; at least one semiconductor device; at least one input terminal; at least two output terminals; and another transmission line, having an open end or a short-circuited end, connected to the input terminal. A total length of the input terminal and said another transmission line is set to be about an integer times ?/2 in case the transmission line has the open end and about an integer times (?/4+?/2) in case the transmission line has the short-circuited end. One of the output terminals is used as an input port to which a signal is inputted, and another one of the output terminals is used as an output port from which a signal is outputted.

Abstract: A filter circuit filters unnecessary frequency components within a signal. The filter circuit includes a first and a second line pattern and a closed loop pattern portion. The first line pattern has two ends and one end thereof is connected to an input terminal and the other is opened or grounded. The second line pattern has two ends and one end thereof is connected to an output terminal and the other being opened or grounded. The closed loop pattern portion, which is interposed between the first and the second line pattern, has two or more closed loop patterns and each of the closed loop patterns has an electromagnetic coupling portion coupled to each of the first and the second line pattern.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The present invention relates to a high frequency circuit module in which a two or more layer dielectric substrate is used. The dielectric substrate provided between a conductor line of a matching circuit on the input side or on the output side and a metal ground is composed of two or more layers. Since a required part can be increased in thickness without changing the thickness of the whole dielectric substrate, the transmission loss can be reduced and the miniaturization of the high frequency circuit module and the communication device using the same can be realized.

Abstract: A filter circuit filters unnecessary frequency components within a signal. The filter circuit includes a first and a second line pattern and a closed loop pattern portion. The first line pattern has two ends and one end thereof is connected to an input terminal and the other is opened or grounded. The second line pattern has two ends and one end thereof is connected to an output terminal and the other being opened or grounded. The closed loop pattern portion, which is interposed between the first and the second line pattern, has two or more closed loop patterns and each of the closed loop patterns has an electromagnetic coupling portion coupled to each of the first and the second line pattern.