Abstract: An object of the invention is to provide a power converter that can be reduced in size. To achieve this, a power converter according to the invention includes: water passages arranged radially from an assumed central axis, each being trapezoid-shaped in cross section; and power modules placed between the water passages such that each of the power modules is sandwiched from both surfaces thereof by the water passages. Each of the power modules has an output terminal and positive and negative terminals on an end face located in a centrifugal direction side with respect to the assumed central axis. Any of the power modules and an adjacent one of the power modules are set in a front-back inverted manner.

Abstract: A power conversion apparatus includes: a circuit body including a switching device; a base member forming a first concave portion and a cooling surface; and a wedge inserted in the first concave portion of the base member. The first concave portion of the base member is formed by a substrate portion forming the cooling surface, a first wall disposed on the opposite side of the substrate portion from the cooling surface, and an intermediate portion interconnecting the first wall and the substrate portion. The first wall forms an insertion space for insertion of the wedge, and a heat transfer plane forming a heat dissipating surface and a heat transfer path of the circuit body. The intermediate portion is plastically deformed by inserting the wedge into the insertion space, thus causing the first wall to be displaced toward the location of the circuit body.

Abstract: A waterproof electronic device includes: an electronic component module having an electronic component including a semiconductor element, a heat dissipating member provided on the electronic component in a thermally conductive manner, and an insulating material that surrounds the electronic component in such a manner that one surface of the heat dissipating member is exposed; and a waterproof film that is formed at least on whole surfaces in regions of the electronic component module that are to be immersed in a coolant.

Abstract: An object of the invention is to manufacture a semiconductor module small. A metal wire (212) connecting a control electrode (101) and a control terminal (21) rises to form a first angle (?1) from the control electrode (101) toward a first conductive portion (202), gradually goes in substantially parallel to the first conductive portion (202) as the metal wire approaches the first conductive portion (202), and is connected to the control terminal (21) to form a second angle (?2) smaller than the first angle (?1).

Abstract: In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which a liquid silicone gel prior to curing does not leak even if the gel is injected.

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

Abstract: An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor module 300 and a flow channel formation body 1000 on which the power semiconductor module 300 is disposed. The power semiconductor module 300 has a high thermal conductor 920 which is disposed at a position between a semiconductor chip and the flow channel formation body 1000 and a sealing material that seals a power semiconductor element and the high thermal conductor 920. The high thermal conductor 920 has a fin protruding to the flow channel formation body 1000 at the side of the flow channel formation body 1000 and a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

Abstract: In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. In addition, it is desirable to eliminate a gap and to reduce contact heat resistance between members in contact with each other, by suitably pressurizing a portion between the semiconductor component having the incorporated semiconductor element and the cooling device. In this case, if rigidity of a case in which the semiconductor component having the incorporated semiconductor element or the cooling device is installed is high in a pressurizing direction, the rigidity hinders a heat transfer point from being suitably pressurized.

Abstract: A power conversion apparatus includes: a circuit body including a switching device; a base member forming a first concave portion and a cooling surface; and a wedge inserted in the first concave portion of the base member. The first concave portion of the base member is formed by a substrate portion forming the cooling surface, a first wall disposed on the opposite side of the substrate portion from the cooling surface, and an intermediate portion interconnecting the first wall and the substrate portion. The first wall forms an insertion space for insertion of the wedge, and a heat transfer plane forming a heat dissipating surface and a heat transfer path of the circuit body. The intermediate portion is plastically deformed by inserting the wedge into the insertion space, thus causing the first wall to be displaced toward the location of the circuit body.

Abstract: An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layer 700 is provided between a power semiconductor module 302 and a heat dissipation portion 307B. The power semiconductor module 302 includes a resin sealer 348, which covers a circumferential side surface of a conductor plate 315, and a plurality of recesses 348D are provided in the resin sealer 348. The insulation layer 700 is formed of a spray coated film 710, an insulation film 720, and a resin layer 730, and the spray coated film 710 is formed on the surface of the resin sealer 348 including recesses 348D to form a seamless flat surface. The planar size of each of the recesses 348D is greater than the planar size of each flat portion 711, which forms the spray coated film 710.

Abstract: The present invention relates to a power module obtained by connecting the opposite sides of a chip with solder, and prevents the side surfaces of a base portion from becoming wet with solder, which would otherwise cause connection failures of the solder or chip displacement, and also prevents peeling of molding resin, which would otherwise break the chip or shorten the life of the solder. The base portion is integrally formed with one of lead frames, and the side surfaces of the base portion and the surface of the main body of the lead frame are roughened so as to have reduced solder wettability. Meanwhile, the solder connection surface of the base portion is not roughened so as to ensure the solder wettability. Accordingly, it is possible to reduce failures that may occur during solder connection and obtain a highly reliable power module (FIG. 5).

Abstract: A waterproof electronic device includes: an electronic component module having an electronic component including a semiconductor element, a heat dissipating member provided on the electronic component in a thermally conductive manner, and an insulating material that surrounds the electronic component in such a manner that one surface of the heat dissipating member is exposed; and a waterproof film that is formed at least on whole surfaces in regions of the electronic component module that are to be immersed in a coolant.

Abstract: A power module or the like is provided in which lower inductance and miniaturization are achieved. The power module includes: main body units (11 to 13), cooling units (21 to 24) which cool the main body units (11 to 13), busbars (51, 52) connected to power terminals (1i, 1j) of the main body units (11 to 13), a casing (W) in which at least contact parts with the busbars (51, 52) are insulative, and a metal member (30) which supports the casing (W). The metal member (30) tightly contacts the casing (W), thereby forming a box with one side opened. At least the main body units (11 to 13) and the busbars (51, 52) are arranged inside the box. An insulating sealant is provided to fill the inside of the box.

Abstract: A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

Abstract: The present invention relates to a power module obtained by connecting the opposite sides of a chip with solder, and prevents the side surfaces of a base portion from becoming wet with solder, which would otherwise cause connection failures of the solder or chip displacement, and also prevents peeling of molding resin, which would otherwise break the chip or shorten the life of the solder. The base portion is integrally formed with one of lead frames, and the side surfaces of the base portion and the surface of the main body of the lead frame are roughened so as to have reduced solder wettability. Meanwhile, the solder connection surface of the base portion is not roughened so as to ensure the solder wettability. Accordingly, it is possible to reduce failures that may occur during solder connection and obtain a highly reliable power module.

Abstract: The present invention aims at providing a power module and a lead frame for the power module which can enhance adhesion between a heat sink and an insulating resin sheet while maintaining heat radiation properties. The power module includes: the lead frame including a conductor plate formed from Cu or a Cu alloy, and an Al film formed at least on the other side, opposite to one side on which to mount a semiconductor device, of the conductor plate; the semiconductor device mounted on the one side of the conductor plate; a sealing resin which seals at least the semiconductor device and the conductor plate; and an insulating resin sheet adhered to the conductor plate through the Al film therebetween.

Abstract: A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

Abstract: An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layer 700 is provided between a power semiconductor module 302 and a heat dissipation portion 307B. The power semiconductor module 302 includes a resin sealer 348, which covers a circumferential side surface of a conductor plate 315, and a plurality of recesses 348D are provided in the resin sealer 348. The insulation layer 700 is formed of a spray coated film 710, an insulation film 720, and a resin layer 730, and the spray coated film 710 is formed on the surface of the resin sealer 348 including recesses 348D to form a seamless flat surface. The planar size of each of the recesses 348D is greater than the planar size of each flat portion 711, which forms the spray coated film 710.

Abstract: A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.

Abstract: A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes.