Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: A dispersion which contains a dispersant and particles selected from among metal particles and metal oxide particles, and which is characterized in that: the dispersant has a chemical structure that is able to be bonded or adsorbed to the particles; and the dispersant contains a low-molecular-weight dispersant that has at least one peak within a molecular weight region of 31 or more but less than 1,000 in the molecular weight distribution curve in terms of polyethylene glycol as determined by gel permeation chromatography and a high-molecular-weight dispersant that has at least one peak within a molecular weight region of 1,000 or more but 40,000 or less in the above-described molecular weight distribution curve.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2). 0.0001?(reductant mass/copper oxide mass)?0.10??(1) 0.0050?(dispersing agent mass/copper oxide mass)?0.30??(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Abstract: A copper and/or copper oxide dispersion capable of forming an electroconductive film exhibiting excellent stability with respect to temporal change and having a fine pattern form, an electroconductive film laminate obtained by laminating the electroconductive film produced using the copper and/or copper oxide dispersion, and an electroconductive film transistor. The copper and/or copper oxide dispersion contains 0.50-60 mass % of copper and/or copper oxide microparticles and the following components (1)-(4): (1) a surface energy modifier; (2) an organic compound having a phosphate group; (3) 0.050-10 mass % of a solvent having a vapor pressure of 0.010 Pa to less than 20 Pa at 20° C.; and (4) a solvent having a vapor pressure of 20 Pa to 150 hPa at 20° C. The electroconductive laminate is obtained by laminating an electroconductive film containing copper on a substrate.

Abstract: To provide a copper and/or copper oxide dispersion capable of forming an electroconductive film exhibiting excellent stability with respect to temporal change and having a fine pattern form, an electroconductive film laminate obtained by laminating the electroconductive film produced using the copper and/or copper oxide dispersion, and an electroconductive film transistor. The copper and/or copper oxide dispersion contains 0.50-60 mass % of copper and/or copper oxide microparticies and the following components (1)-(4): (1) a surface energy modifier; (2) an organic compound having a phosphate group; (3) 0.050-10 mass % of a solvent having a vapor pressure of 0.010 Pa to less than 20 Pa at 20° C.; and (4) a solvent having a vapor pressure of 20 Pa to 150 hPa at 20° C. The electroconductive laminate is obtained by laminating an electroconductive film containing copper on a substrate.

Abstract: A dispersion which contains a dispersant and particles selected from among metal particles and metal oxide particles, and which is characterized in that: the dispersant has a chemical structure that is able to be bonded or adsorbed to the particles; and the dispersant contains a low-molecular-weight dispersant that has at least one peak within a molecular weight region of 31 or more but less than 1,000 in the molecular weight distribution curve in terms of polyethylene glycol as determined by gel permeation chromatography and a high-molecular-weight dispersant that has at least one peak within a molecular weight region of 1,000 or more but 40,000 or less in the above-described molecular weight distribution curve.

Abstract: To provide a copper and/or copper oxide dispersion capable of forming an electroconductive film exhibiting excellent stability with respect to temporal change and having a fine pattern form, an electroconductive film laminate obtained by laminating the electroconductive film produced using the copper and/or copper oxide dispersion, and an electroconductive film transistor. The copper and/or copper oxide dispersion contains 0.50-60 mass % of copper and/or copper oxide microparticies and the following components (1)-(4): (1) a surface energy modifier; (2) an organic compound having a phosphate group; (3) 0.050-10 mass % of a solvent having a vapor pressure of 0.010 Pa to less than 20 Pa at 20° C.; and (4) a solvent having a vapor pressure of 20 Pa to 150 hPa at 20° C. The electroconductive laminate is obtained by laminating an electroconductive film containing copper on a substrate.

Abstract: An organic semiconductor thin film exhibiting high mobility and a method for preparing the same, and a material for preparing the organic semiconductor thin film by a wet process and a method for preparing the same are provided. Further, an organic semiconductor device excellent in electronic characteristics is provided. A mixture of high purity pentacene and 1,2,4-trichlorobenzene was heated to prepare a homogeneous solution, and a silicon substrate having a pattern of a gold electrode as a source/drain electrode formed thereon was heated to 100° C. and the resultant pentacene solution was spread on the surface of the substrate. When 1,2,4-trichlorobenzene was evaporated, a pentacene thin film was formed. A transistor was formed with the use of the thin film.

Abstract: An organic semiconductor thin film exhibiting high mobility and a method for preparing the same, and a material for preparing the organic semiconductor thin film by a wet process and a method for preparing the same are provided. Further, an organic semiconductor device excellent in electronic characteristics is provided. A mixture of high purity pentacene and 1,2,4-trichlorobenzene was heated to prepare a homogeneous solution, and a silicon substrate having a pattern of a gold electrode as a source/drain electrode formed thereon was heated to 100° C. and the resultant pentacene solution was spread on the surface of the substrate. When 1,2,4-trichlorobenzene was evaporated, a pentacene thin film was formed. A transistor was formed with the use of the thin film.