Patents by Inventor Eiichi Shinomiya

Eiichi Shinomiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5653779
    Abstract: A quartz glass component having a projection on a flat face is manufactured by molding a quartz glass body at a high temperature and under high pressure. The heating temperature is set to a range of from 1800.degree. to 2000.degree. C. and slight pressure is applied by the female die which forms the projection, or pressure in a direction against gravity. The molding die includes a graphite frame surrounding a molding space formed by a female die and a receiving die sandwiching the quartz glass body in the graphite frame. The space between the receiving die and the female die is width-reducible, the compositions of the graphite frame and the two graphite dies are made to differ, the female die and receiving die contacting the quartz glass body during pressure molding have a plurality of gas-permeable micropores such as in sintered graphite for example and are formed by a high-purity graphite material having air permeability.
    Type: Grant
    Filed: June 20, 1995
    Date of Patent: August 5, 1997
    Assignees: Heraeus Quarzglas GmbH, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Makoto Saito, Hideki Tsuchida, Eiichi Shinomiya, Hiroyuki Kimura, Kimikazu Taniyama, Norikazu Fujii
  • Patent number: 4956208
    Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.
    Type: Grant
    Filed: July 6, 1989
    Date of Patent: September 11, 1990
    Assignees: Shin-Etsu Handotai Co., Ltd., Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Uchikawa, Atsushi Iwasaki, Toshio Fukuoka, Mitsuo Matsumura, Hiroshi Matsui, Yasuhiko Sato, Masaaki Aoyama, Eiichi Shinomiya, Akira Fujinoki, Nobuyoshi Ogino
  • Patent number: 4935046
    Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.
    Type: Grant
    Filed: December 1, 1988
    Date of Patent: June 19, 1990
    Assignees: Shin-Etsu Handotai Company, Limited, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Uchikawa, Atsushi Iwasaki, Toshio Fukuoka, Mitsuo Matsumura, Hiroshi Matsui, Yasuhiko Sato, Masaaki Aoyama, Eiichi Shinomiya, Akira Fujinoki, Nobuyoshi Ogino