Patents by Inventor Eiichi Toya

Eiichi Toya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5200157
    Abstract: The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.
    Type: Grant
    Filed: March 14, 1991
    Date of Patent: April 6, 1993
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Eiichi Toya, Masayuki Ohkawa, Kazuo Itoh, Yasumi Sasaki
  • Patent number: 5178727
    Abstract: A ceramic membrane device for a photomask is a ring-shaped base plate constituting a circumferential frame and having a flat front surface, an outer side surface and a rear surface, a front CVD coating supported on the front surface of the base plate and defining a flat surface on which a masking pattern is to be formed, and a rear CVD coating formed on the rear surface of the base plate. The front and rear CVD coatings are made of a silicon compound.
    Type: Grant
    Filed: February 10, 1992
    Date of Patent: January 12, 1993
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Eiichi Toya, Yukio Itoh, Tadashi Ohashi, Masayuki Sumiya
  • Patent number: 5074017
    Abstract: A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
    Type: Grant
    Filed: December 26, 1989
    Date of Patent: December 24, 1991
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Eiichi Toya, Yukio Itoh, Tadashi Ohashi, Masayuki Sumiya, Yasumi Sasaki