Patents by Inventor Eiichiro ISHIMIZU
Eiichiro ISHIMIZU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984320Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.Type: GrantFiled: January 27, 2023Date of Patent: May 14, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hayato Yamaguchi, Yusuke Tanatsugu, Eiichiro Ishimizu
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Patent number: 11884844Abstract: A polishing composition used in wafer polishing process for eliminating protrusion around laser mark, thereby achieving a flat polished surface, as well as a wafer polishing method using the polishing composition. A post-polishing composition for elimination of a laser mark remaining after polishing of silicon wafer with a primary polishing composition containing silica particles, water, and a basic compound, the post-polishing composition including silica particles, water, a tetraalkylammonium ion, and a water-soluble polymer, wherein the mass ratio of the tetraalkylammonium ion to SiO2 of the silica particles is 0.200 to 1.000:1; the mass ratio of SiO2 dissolved in the polishing composition to SiO2 of the silica particles is 0.100 to 1.500:1; and the mass ratio of the water-soluble polymer to SiO2 of the silica particles is 0.005 to 0.05:1. The silica particles have an average primary particle diameter of 1 nm to 100 nm.Type: GrantFiled: October 6, 2022Date of Patent: January 30, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hibiki Ishijima, Eiichiro Ishimizu
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Patent number: 11873420Abstract: A polishing composition eliminating protrusions around a laser mark in wafer polishing processes, the manufacturing method therefor and a polishing method using the composition. The polishing composition including silica particles and water, wherein: the composition includes a tetraalkylammonium ion such that the mass ratio of the ion to SiO2 of the silica particles is 0.400 to 1.500:1, and the mass ratio of SiO2 dissolved in the polishing composition to SiO2 is 0.100 to 1.500:1; the tetraalkylammonium ion is derived from a compound selected from the group made of an alkali silicate, a hydroxide, a carbonate, a sulfate, and a halide while the ion is contained in the polishing composition in 0.2% by mass to 8.0% by mass; and the dissolved SiO2 is derived from a tetraalkylammonium silicate, a potassium silicate, a sodium silicate, or a mixture of any of these.Type: GrantFiled: September 28, 2020Date of Patent: January 16, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hayato Yamaguchi, Hibiki Ishijima, Eiichiro Ishimizu
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Publication number: 20230416569Abstract: A polishing composition used in wafer polishing process for eliminating protrusion around laser mark, thereby achieving a flat polished surface, as well as a wafer polishing method using the polishing composition. A post-polishing composition for elimination of a laser mark remaining after polishing of silicon wafer with a primary polishing composition containing silica particles, water, and a basic compound, the post-polishing composition including silica particles, water, a tetraalkylammonium ion, and a water-soluble polymer, wherein the mass ratio of the tetraalkylammonium ion to SiO2 of the silica particles is 0.200 to 1.000:1; the mass ratio of SiO2 dissolved in the polishing composition to SiO2 of the silica particles is 0.100 to 1.500:1; and the mass ratio of the water-soluble polymer to SiO2 of the silica particles is 0.005 to 0.05:1. The silica particles have an average primary particle diameter of 1 nm to 100 nm.Type: ApplicationFiled: October 6, 2022Publication date: December 28, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hibiki ISHIJIMA, Eiichiro ISHIMIZU
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Publication number: 20230178376Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.Type: ApplicationFiled: January 27, 2023Publication date: June 8, 2023Applicant: Nissan Chemical CorporationInventors: Hayato YAMAGUCHI, Yusuke TANATSUGU, Eiichiro ISHIMIZU
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Patent number: 11621171Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.Type: GrantFiled: September 20, 2019Date of Patent: April 4, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hayato Yamaguchi, Yusuke Tanatsugu, Eiichiro Ishimizu
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Publication number: 20220356373Abstract: A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=(Rav?Rb)/(Rb)??(1) (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=(area of a circle whose diameter is a maximum diameter of the particle)/(projected area)??(2).Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shigeru MITSUI, Tohru NISHIMURA, Eiichiro ISHIMIZU
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Patent number: 11459486Abstract: There are provided a polishing composition that gives, in the step of polishing a wafer, a flat polished surface having a reduced height difference between a central region and a peripheral region (laser mark region) of the wafer, and a method for producing a wafer using the polished composition. A polishing composition comprising water, silica particles, an alkaline substance, and an amphoteric surfactant of formula (1): wherein R1 is a C10-20 alkyl group, or a C1-5 alkyl group containing an amide group; R2 and R3 are each independently a C1-9 alkyl group; and X?is a C1-5 anionic organic group containing a carboxylate ion or a sulfonate ion. Silica particles in the form of an aqueous dispersion of silica particles having a mean primary particle diameter of 5 to 100 nm may be used. A method for producing a wafer, wherein in the step of polishing a wafer, polishing is performed until a height difference between a central region and a peripheral region of the wafer becomes 100 nm or less.Type: GrantFiled: April 10, 2018Date of Patent: October 4, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hiroaki Sakaida, Eiichiro Ishimizu
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Publication number: 20220228031Abstract: A polishing composition that is for use in CMP polishing and that makes it possible to minimize the occurrence of defects. A polishing composition comprising silica particles, a basic nitrogen-containing organic compound, and water serving as a solvent, wherein the composition exhibits an Rsp value of the following Formula (1) of more than 0.7 and 6 or less as calculated from values measured by pulse NMR: Rsp=(Rav?Rb)/(Rb) . . . (1) (wherein Rsp is an index of water affinity; Rav is the reciprocal of the relaxation time of the polishing composition; and Rb is the reciprocal of the relaxation time of the water serving as a solvent of the polishing composition).Type: ApplicationFiled: June 26, 2020Publication date: July 21, 2022Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shigeru MITSUI, Eiichiro ISHIMIZU, Tohru NISHIMURA, Wataru OMORI
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Publication number: 20220049126Abstract: A polishing composition eliminating protrusions around a laser mark in wafer polishing processes, the manufacturing method therefor and a polishing method using the composition. The polishing composition including silica particles and water, wherein: the composition includes a tetraalkylammonium ion such that the mass ratio of the ion to SiO2 of the silica particles is 0.400 to 1.500:1, and the mass ratio of SiO2 dissolved in the polishing composition to SiO2 is 0.100 to 1.500:1; the tetraalkylammonium ion is derived from a compound selected from the group made of an alkali silicate, a hydroxide, a carbonate, a sulfate, and a halide while the ion is contained in the polishing composition in 0.2% by mass to 8.0% by mass; and the dissolved SiO2 is derived from a tetraalkylammonium silicate, a potassium silicate, a sodium silicate, or a mixture of any of these.Type: ApplicationFiled: September 28, 2020Publication date: February 17, 2022Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hayato YAMAGUCHI, Hibiki ISHIJIMA, Eiichiro ISHIMIZU
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Publication number: 20210407816Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.Type: ApplicationFiled: September 20, 2019Publication date: December 30, 2021Applicant: Nissan Chemical CorporationInventors: Hayato YAMAGUCHI, Yusuke TANATSUGU, Eiichiro ISHIMIZU
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Patent number: 10865113Abstract: There is provided a method for obtaining a purified aqueous solution of silicic acid containing less metal impurities such as Cu and Ni using water glass as a raw material with less number of purification steps than that in conventional methods without using any unnecessary additives. The method for producing a purified aqueous solution of silicic acid, the method comprising the steps of: (a) passing an aqueous solution of alkaline silicate having a silica concentration of 0.5% by mass or more and 10% by mass or less through a column filled with a polyamine-, iminodiacetic acid-, or aminophosphoric acid-type chelating resin, and (b) passing the aqueous solution passed in the step (a) through a column filled with a hydrogen-type cation exchange resin.Type: GrantFiled: October 14, 2016Date of Patent: December 15, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki Sakaida, Eiichiro Ishimizu
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Publication number: 20200317955Abstract: A polishing composition for eliminating a protrusion around a laser mark on a laser mark-provided wafer and a wafer polishing method for polishing a protrusion around a laser mark, the polishing composition including a water-soluble compound, a chelating agent, and metal oxide particles, and having a pH of 7 to 12, wherein the water-soluble compound has a hydrophobic moiety and a hydrophilic moiety; the hydrophilic moiety has, on an end or side chain thereof, a hydroxyl group and a hydroxyethyl group, an acyloxy group, a carboxylic acid group, a carboxylic acid salt group, a sulfonic acid group, or a sulfonic acid salt group; and the water-soluble compound is contained in an amount of 5 to 700 ppm in the polishing composition. The metal oxide particles are silica particles, zirconia particles, or ceria particles contained in a colloidal sol and having an average primary particle diameter of 5 to 100 nm.Type: ApplicationFiled: December 19, 2018Publication date: October 8, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Eiichiro ISHIMIZU, Yusuke TANATSUGU
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Publication number: 20200308448Abstract: A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=(Rav?Rb)/(Rb)??(1) (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=(area of a circle whose diameter is a maximum diameter of the particle)/(projected area)??(2).Type: ApplicationFiled: October 31, 2019Publication date: October 1, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shigeru MITSUI, Tohru NISHIMURA, Eiichiro ISHIMIZU
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Publication number: 20200123414Abstract: A polishing composition that gives, in the step of polishing a wafer, a flat polished surface having a reduced height difference between a central region and a peripheral region of the wafer, and a method for producing a wafer using the polished composition. A polishing composition comprising water, silica particles, an alkaline substance, and an amphoteric surfactant of formula (1): wherein R1 is a C10-20 alkyl group, or a C1-5 alkyl group containing an amide group; R2 and R3 are each independently a C1-9 alkyl group; and X? is a C1-5 anionic organic group containing a carboxylate ion or a sulfonate ion. A method for producing a wafer, wherein in the step of polishing a wafer, polishing is performed until a height difference between a central region and a peripheral region of the wafer becomes 100 nm or less.Type: ApplicationFiled: April 10, 2018Publication date: April 23, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hiroaki SAKAIDA, Eiichiro ISHIMIZU
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Publication number: 20190055131Abstract: There is provided a method for obtaining a purified aqueous solution of silicic acid containing less metal impurities such as Cu and Ni using water glass as a raw material with less number of purification steps than that in conventional methods without using any unnecessary additives. The method for producing a purified aqueous solution of silicic acid, the method comprising the steps of: (a) passing an aqueous solution of alkaline silicate having a silica concentration of 0.5% by mass or more and 10% by mass or less through a column filled with a polyamine-, iminodiacetic acid-, or aminophosphoric acid-type chelating resin, and (b) passing the aqueous solution passed in the step (a) through a column filled with a hydrogen-type cation exchange resin.Type: ApplicationFiled: October 14, 2016Publication date: February 21, 2019Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki SAKAIDA, Eiichiro ISHIMIZU