Abstract: An aqueous dispersion for chemical mechanical polishing includes: (A) silica particles; (B) at least one kind selected from the group consisting of organic acids and salts thereof; and (C) at least one kind selected from the group consisting of amino group-containing silane compounds and condensates thereof, and has a pH of 7 or more and 14 or less.

Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of carboxyl group-containing organic acids and salts thereof; (B) a basic compound having a first acid dissociation constant (pKa) of 9 or more; and (C) abrasive grains, wherein the component (A) has a complex stability constant with copper of 5 or less, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of organic acids and salts thereof; (B) a phosphorus-containing compound; and (C) abrasive grains each having an absolute value of a zeta potential in the composition of 5 mV or more, wherein, when a content of the component (A) in the composition is represented by MA mass % and a content of the component (B) therein is represented by MB mass %, a ratio MA/MB of the content of the component (A) to the content of the component (B) ranges from 1 to 10, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.

Abstract: A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.

Abstract: A chemical mechanical polishing aqueous dispersion includes: (A) an amino acid, (B) abrasive grains, (C) a surfactant, (D) an oxidizing agent, and (E) ammonia, the ratio (WA/WD) of the content (WA) of the amino acid to the content (WD) of the oxidizing agent being 1.5 to 6.0, and the ratio (WE/WD) of the content (WE) of the ammonia to the content (WD) of the oxidizing agent being 0.05 to 0.6.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.

Abstract: A chemical mechanical polishing aqueous dispersion includes: (A) an amino acid, (B) abrasive grains, (C) a surfactant, (D) an oxidizing agent, and (E) ammonia, the ratio (WA/WD) of the content (WA) of the amino acid to the content (WD) of the oxidizing agent being 1.5 to 6.0, and the ratio (WE/WD) of the content (WE) of the ammonia to the content (WD) of the oxidizing agent being 0.05 to 0.6.

Abstract: A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.