Abstract: To provide an organic electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. An organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein any one layer of the organic layer contains, for example, as shown below, a metal complex having a group represented by formula (I).

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent sensitivity to exposure. Another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, which relate to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition contains a resin which is decomposed by action of acid to increase polarity, in which at least one of a requirement that the actinic ray-sensitive or radiation-sensitive resin composition further contains a compound represented by Formula (1), or a requirement that the resin which is decomposed by action of acid to increase polarity has a residue formed by removing one hydrogen atom from the compound represented by Formula (1) is satisfied.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition with which LWR of a pattern to be formed can be reduced; a resist film; a pattern forming method; and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) having a repeating unit (a), in which the repeating unit (a) is a repeating unit having an ionic group which generates an acid in a case where a leaving group is eliminated by irradiation with an actinic ray or a radiation, in which a repeating unit obtained by replacing the leaving group with a hydrogen atom has a molecular weight of 300 or less, and the repeating unit (a) is a predetermined amount or more with respect to a total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

Abstract: An object of the invention is to provide a photoelectric conversion element exhibiting an excellent production suitability. Also, the other object of the invention is to provide an optical sensor and an imaging element comprising the photoelectric conversion element. The photoelectric conversion element of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) below.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) of which polarity increases by an action of an acid, the resin (A) having a repeating unit represented by General Formula (A1) as defined herein; and a compound (B) that generates an acid upon irradiation with actinic rays or radiation.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a polarity that increases by an action of an acid, and (B) a compound that generates an acid upon irradiation with actinic rays or radiation, represented by a specific general formula, is which the resin (A) includes a repeating unit represented by a specific general formula; and an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) of which a solubility in a developer changes by an action of an acid; a compound (A) that has a group (a) having a polarity which changes through decomposition by an action of an acid, and generates an acid (ac1) upon irradiation with actinic rays or radiation; a compound (B) that generates an acid (ac2) having a higher pKa than the acid (ac1) generated from the compound (A), upon irradiation with actinic rays or radiation; and a basic compound (C).

Abstract: The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2).

Abstract: A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing (A) an acid-decomposable resin, (B) a compound represented by General Formula (b1), and (C) a compound represented by General Formula (c1), in which a ratio of a content of the compound (C) to a content of the compound (B) is from 0.01% by mass to 10% by mass. In the formulae, L represents a single bond or a divalent linking group. A represents a group that decomposes by the action of an acid. B represents a group that decomposes by the action of an acid, a hydroxy group, or a carboxy group. It should be noted that at least one B represents the hydroxy group or the carboxy group. n represents an integer from 1 to 5. X represents an (n+1)-valent linking group. M+ represents a sulfonium ion or an iodonium ion.

Abstract: The invention provides a photoelectric conversion element exhibiting excellent photoelectric conversion efficiency even in a case where the photoelectric conversion film is a thin film. Also, the invention provides an optical sensor and an imaging element including the photoelectric conversion element. The invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

Abstract: The present invention provides a photoelectric conversion element including a photoelectric conversion film having a narrow half-width of absorption peak and an excellent photoelectric conversion efficiency, and an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

Abstract: An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10): in which X1 represents a nitrogen atom or CRa, and rings A to B each represent a specific nitrogen-containing ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; V1 represents NRd, an oxygen atom, a sulfur atom, or a selenium atom; Ra to Rd each represent a hydrogen atom or a substituent; R1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a solubility in an alkali developer that increases through decomposition by an action of an acid and (B) a compound that generates an acid upon irradiation with actinic rays or radiation and is represented by a specific structure; an actinic ray-sensitive or radiation-sensitive film using the composition; a pattern forming method; a method for manufacturing an electronic device; and a compound.

Abstract: A first object of the present invention is to provide a photoelectric conversion element which includes a photoelectric conversion film having a narrow half-width of an absorption peak and has excellent heat resistance. Moreover, a second object of the present invention is to provide an imaging element and an optical sensor. Furthermore, a third object of the present invention is to provide a novel compound. A photoelectric conversion element according to the embodiment of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group.