Abstract: An organic EL device with which occurrence of leakage current between electrodes can be prevented includes: a substrate; a first electrode layer separating groove that separates a first electrode layer into small pieces; a function layer separating groove that separates a function layer into small light emitting regions; and a unit light emitting element separating groove extending from a second electrode layer to the function layer and separating the second electrode layer into small pieces. One of the small pieces of the first electrode layer, one of the small light emitting regions, and one of the small pieces of the second electrode layer structure a unit organic EL element, electrically connected in series. The average width of the unit light emitting element separating groove at the second electrode layer is wider than the average width of the unit light emitting element separating groove at the light emitting portion separating layer.

Abstract: An organic EL device with which occurrence of leakage current between electrodes can be prevented includes: a substrate; a first electrode layer separating groove that separates a first electrode layer into small pieces; a function layer separating groove that separates a function layer into small light emitting regions; and a unit light emitting element separating groove extending from a second electrode layer to the function layer and separating the second electrode layer into small pieces. One of the small pieces of the first electrode layer, one of the small light emitting regions, and one of the small pieces of the second electrode layer structure a unit organic EL element, electrically connected in series. The average width of the unit light emitting element separating groove at the second electrode layer is wider than the average width of the unit light emitting element separating groove at the light emitting portion separating layer.

Abstract: The present invention aims to provide thin-film manufacturing equipment, a method for manufacturing a thin film, and a method for maintaining thin-film manufacturing equipment, which are capable of depositing with high productivity even in the occurrence of unexpected failure. Thin-film manufacturing equipment provided herein includes a group of deposition chambers that is a collection of deposition chambers each provided with a deposition compartment, in which a thin film is deposited on a substrate, a movable chamber designed to convey a substrate, and more than two substrate temporary holding devices each for temporarily holding a substrate, wherein the movable device is designed to deliver and receive the substrate to and from each of the deposition chambers and designed to perform at least one action selected from the group consisting of receiving and discharging of the substrate from and to each of the more than two substrate temporary holding devices.

Abstract: In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cm2 and having a conductive film formed thereon with a substrate holder, disposing the substrate to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cm2 or more, the substrate holder is electrically insulated from the conductive film formed on the surface of the substrate by forming a separation groove in the conductive film.

Abstract: In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cm2 and having a conductive film formed thereon with a substrate holder, disposing the substrate to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cm2 or more, the substrate holder is electrically insulated from the conductive film formed on the surface of the substrate by forming a separation groove in the conductive film.

Abstract: A plurality of solder bumps are arranged in a row at regular pitch in a lead wire soldering region of a solar battery. A soldering apparatus for soldering a lead wire to the lead wire soldering region via the solder bumps comprises a lead wire feeding section for feeding out the lead wire. An end of the lead wire in the lead wire feeding section is chucked and the lead wire is laid over all length of the row of solder bumps. The soldering apparatus further comprises a soldering unit for soldering the lead wire onto the solder bump. The soldering unit has a lead wire holding member for holding the lead wire on a solder bump and a soldering iron. The soldering apparatus repeats an operation for welding the lead wire to the solder bump by means of the soldering iron, while the lead wire is held by the lead wire holding member.

Abstract: A substrate is washed with a washing liquid. Compressed air is blown to the substrate to remove the washing liquid. A thin film is formed on the substrate from which the washing liquid has been removed.

Abstract: A method of manufacturing a semiconductor device having a substrate with a thin film formed thereon, the method including washing the substrate with a washing liquid, removing the washing liquid from the substrate by blowing a compressed air to the substrate washed, and forming a thin film on the substrate immediately after blowing the compressed air on the substrate without performed another step, wherein the compressed air to be blown on the substrate may be pre-heated or ionized and the substrate may be washed with an inert gas in the form of plasma before the thin film is formed.