Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

Abstract: Provided are a novel compound suitable as an organic semiconductor material, the compound being a substituted benzochalcogenoacene compound represented by the formula (1), a thin film comprising the compound, and an organic semiconductor device having the thin film as a component. In the formula (1), each E independently represents a sulfur or selenium atom, and R1 and R2 each independently represents a hydrogen atom, an optionally substituted C4-30 alkyl group, an optionally substituted C4-30 alkoxy group, an optionally substituted C6-30 aryl group, an optionally substituted C7-30 aralkyl group, an optionally substituted C4-30 heteroaryl group, an optionally substituted C5-30 heteroaralkyl group, or an optionally fluorinated C3-30 trialkylsilyl group, both R1 and R2 being not hydrogen atoms.

Abstract: A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

Abstract: Discloses is a compound represented by the formula (1): wherein a ring structure A and a ring structure B independently represent an aromatic ring which may be substituted, or a heterocyclic ring which may be substituted; a ring structure C represents a benzene ring which may be substituted, a hetero[3,2-b]heterole ring, or a benzo[1,2-b:4,5-b?]diheterole ring which may be substituted; W, X, Y and Z independently represent a sulfur atom, an oxygen atom, a selenium atom, a tellurium atom, SO2, (R1)—C—(R2), (R2)—Si—(R4), or N—(R5), and at least one of W, X, Y and Z is N—(R5); R1, R2, R3, R4 and R5 independently represent a hydrogen atom, a substituent i, a substituent ii, an aryl group which may be substituted with halogen, or a heteroaryl group which may be substituted with halogen, the substituent i is a group selected from Group P shown below, the substituent ii is a group selected from Group P shown below which group is substituted, and Group P consists of an alkyl group, an alkoxy group, an alkyl-subs

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)—, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)—, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)—, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: An SOI substrate includes a thin diaphragm portion that is formed by removing a portion of the substrate from a rear surface side, and a thick outer frame portion that surrounds the diaphragm portion. A piezoresistive element that outputs an electrical signal in response to pressure is formed on the diaphragm portion, and an electrode that extracts the electrical signal from the piezoresistive element is formed on the outer frame portion. The electrode is disposed at a position on the outer frame portion that is separated by greater than or equal to 100 ?m from a boundary line between the diaphragm portion and the outer frame portion.

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)—, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)-, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: An SOI substrate includes a thin diaphragm portion that is formed by removing a portion of the substrate from a rear surface side, and a thick outer frame portion that surrounds the diaphragm portion. A piezoresistive element that outputs an electrical signal in response to pressure is formed on the diaphragm portion, and an electrode that extracts the electrical signal from the piezoresistive element is formed on the outer frame portion. The electrode is disposed at a position on the outer frame portion that is separated by greater than or equal to 100 ?m from a boundary line between the diaphragm portion and the outer frame portion.

Abstract: A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyl or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.

Abstract: A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyd or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.

Abstract: A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyl or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.

Abstract: An acceleration sensor includes first and second fixed electrodes on a substrate, and a movable electrode located above the first and second fixed electrodes, with respect to the substrate, and facing them. The movable electrode is elastically supported on the substrate by a first elastic supporting body and is movable. A mass, which is elastically supported on the substrate by a second elastic supporting body, moves in response to an acceleration in a direction perpendicular to the substrate. A linking portion links the movable electrode and the mass at a position spaced from an axis of movement of the movable electrode by a distance. Acceleration is measured based on changes in a first capacitance between the first fixed electrode and the movable electrode and a second capacitance between the second fixed electrode and the movable electrode. Thus, a highly impact resistant and highly reliable acceleration sensor is obtained.

Abstract: A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyd or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.