Patents by Inventor Eiki Tanikawa

Eiki Tanikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Packages for semiconductor integrated circuit
    Patent number: 5315153
    Abstract: A ceramic package comprising an aluminum nitride substrate, an IC on the substrate, leads attached to the substrate, a metal cap covering the substrate, a resin layer for adhesion of the above elements, and a water-resistant coating on the inner surface of the resin layer.
    Type: Grant
    Filed: May 29, 1991
    Date of Patent: May 24, 1994
    Assignees: Toyo Aluminium Kabushiki Kaisha, Kabushiki Kaisha Enplas
    Inventors: Yuji Nagai, Eiki Tanikawa, Hisao Ohshima, Kazushige Kato
  • Optical information recording mother disc and method of producing the same
    Patent number: 4408319
    Abstract: An optical information recording disc having pits in a first film formed on one of major surfaces of the disc is uniformly covered with a suitable second film, whereby the size of each pits is corrected. When the disc is to be used as a mother disc for production of replicas, at least the wall of each pit is covered by a third layer having continuously increased thickness towards the bottom of the pit so that a peeling off of an intermediate transfer disc from the mother disc is facilitated.
    Type: Grant
    Filed: June 15, 1981
    Date of Patent: October 4, 1983
    Assignee: Pioneer Electronic Corporation
    Inventors: Taiji Tsunoda, Takashi Nishio, Eiki Tanikawa
  • Process for the vapor growth of a thin film
    Patent number: 4179326
    Abstract: Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and polycrystalline Si, on a plurality of wafers, such as wafers of a semiconductor, under a reduced pressure. This improved process allows the growing of a uniformly thin film on each piece of wafer. According to the present invention, the location of the wafers is changed in accordance with a specific pressure within the reaction tube.
    Type: Grant
    Filed: April 14, 1977
    Date of Patent: December 18, 1979
    Assignee: Fujitsu Limited
    Inventors: Daiziro Kudo, Kazuo Maeda, Eiki Tanikawa