Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract: A method for manufacturing a magnetic tape head having a data sensor and a servo sensor. The data sensor and servo sensor are each separated from first and second magnetic shields by a non-magnetic gap layer, and the gap thickness for the servo sensor is larger than the gap thickness for the data sensor. The method involves depositing a first gap layer over shield structures, then depositing a second gap layer using a liftoff process to remove the second gap layer over the data sensor region. A plurality of sensor layers are then deposited, and a stripe height defining mask structure is formed over the data and servo sensor regions, the mask having a back edge that is configured to define a stripe height of the data and servo sensors. An ion milling is then performed to define the stripe height and to remove gap material from the field.

Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract: A method for manufacturing a magnetic tape head having a data sensor and a servo sensor. The data sensor and servo sensor are each separated from first and second magnetic shields by a non-magnetic gap layer, and the gap thickness for the servo sensor is larger than the gap thickness for the data sensor. The method involves depositing a first gap layer over shield structures, then depositing a second gap layer using a liftoff process to remove the second gap layer over the data sensor region. A plurality of sensor layers are then deposited, and a stripe height defining mask structure is formed over the data and servo sensor regions, the mask having a back edge that is configured to define a stripe height of the data and servo sensors. An ion milling is then performed to define the stripe height and to remove gap material from the field.

Abstract: A method for manufacturing a magnetic read head having a very narrow track width. The method includes the use of a non-Si containing photoresist to form a mask prior to ion milling to define the track-width of the sensor. Previously only Si-containing resists were used. The Si in the resist turned to an oxide, which allowed the photoresist to withstand the reactive ion etching used for image transfer to an underlying hard mask. The Si-containing resist, however, has limitations as to how small the mask can be made. It has been found that a non-Si-containing resist provides better resolution at very narrow track-width definition, and also provides good temperature resistance. Some modifications to the process allow the non-Si-containing resist to be used in the construction of the magnetic read sensor.

Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Abstract: In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.

Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.