Patents by Inventor Eiryo Takasuka
Eiryo Takasuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11781246Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.Type: GrantFiled: November 23, 2022Date of Patent: October 10, 2023Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kyoko Okita, Takashi Sakurada, Eiryo Takasuka, Shunsaku Ueta, Sho Sasaki, Naoki Kaji, Hidehiko Mishima, Hirokazu Eguchi
-
Publication number: 20230081506Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.Type: ApplicationFiled: November 23, 2022Publication date: March 16, 2023Applicant: Sumitomo Electric Industries, Ltd.Inventors: Kyoko OKITA, Takashi SAKURADA, Eiryo TAKASUKA, Shunsaku UETA, Sho SASAKI, Naoki KAJI, Hidehiko MISHIMA, Hirokazu EGUCHI
-
Patent number: 11535953Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.Type: GrantFiled: January 30, 2017Date of Patent: December 27, 2022Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kyoko Okita, Takashi Sakurada, Eiryo Takasuka, Shunsaku Ueta, Sho Sasaki, Naoki Kaji, Hidehiko Mishima, Hirokazu Eguchi
-
Publication number: 20210054529Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.Type: ApplicationFiled: January 30, 2017Publication date: February 25, 2021Applicant: Sumitomo Electric Industries, Ltd.Inventors: Kyoko OKITA, Takashi SAKURADA, Eiryo TAKASUKA, Shunsaku UETA, Sho SASAKI, Naoki KAJI, Hidehiko MISHIMA, Hirokazu EGUCHI
-
Publication number: 20170314161Abstract: A crucible having a tubular inner surface is prepared. A source material is arranged so as to make contact with the inner surface, and a seed crystal is arranged in the crucible so as to face the source material. A silicon carbide single crystal grows on the seed crystal by sublimation of the source material. The inner surface is formed of a first region surrounding the source material and a second region other than the first region. In the growing a silicon carbide single crystal, an amount of heat per unit area in the first region is smaller than an amount of heat per unit area in the second region.Type: ApplicationFiled: November 18, 2015Publication date: November 2, 2017Applicant: Sumitomo Electric Industries, Ltd.Inventors: Sho SASAKI, Eiryo TAKASUKA, Shin HARADA, Tsutomu HORI
-
Patent number: 8920565Abstract: Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).Type: GrantFiled: November 14, 2008Date of Patent: December 30, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Masaki Ueno, Eiryo Takasuka
-
Patent number: 8906162Abstract: Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.Type: GrantFiled: January 27, 2012Date of Patent: December 9, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Masaki Ueno, Toshio Ueda, Eiryo Takasuka
-
Patent number: 8628616Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.Type: GrantFiled: December 9, 2008Date of Patent: January 14, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Eiryo Takasuka, Toshio Ueda, Toshiyuki Kuramoto, Masaki Ueno
-
Publication number: 20130255568Abstract: A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown.Type: ApplicationFiled: February 28, 2013Publication date: October 3, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hiroki INOUE, Makoto SASAKI, Shin HARADA, Eiryo TAKASUKA, Shinsuke FUJIWARA
-
Patent number: 8349403Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.Type: GrantFiled: September 13, 2011Date of Patent: January 8, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Eiryo Takasuka, Toshio Ueda, Toshiyuki Kuramoto, Masaki Ueno
-
Patent number: 8349083Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.Type: GrantFiled: October 11, 2011Date of Patent: January 8, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Eiryo Takasuka, Toshio Ueda, Toshiyuki Kuramoto, Masaki Ueno
-
Publication number: 20120118234Abstract: Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.Type: ApplicationFiled: January 27, 2012Publication date: May 17, 2012Applicant: Sumitomo Electric Industries, Ltd.Inventors: Masaki UENO, Toshio UEDA, Eiryo TAKASUKA
-
Patent number: 8120012Abstract: A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x<y<z?1.Type: GrantFiled: September 22, 2006Date of Patent: February 21, 2012Assignees: Agency for Science, Technology and Research, Sumitomo Electric Industries, Ltd.Inventors: Soo-Jin Chua, Peng Chen, Zhen Chen, Eiryo Takasuka
-
Publication number: 20120024227Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.Type: ApplicationFiled: October 11, 2011Publication date: February 2, 2012Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Eiryo TAKASUKA, Toshio UEDA, Toshiyuki KURAMOTO, Masaki UENO
-
Publication number: 20120003142Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.Type: ApplicationFiled: September 13, 2011Publication date: January 5, 2012Inventors: Eiryo Takasuka, Toshio Ueda, Toshiyuki Kuramoto, Masaki Ueno
-
Publication number: 20110198566Abstract: A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N2 and NH3 into active nitrogen at 900° C. is supplied. In addition, in the step of interrupting epitaxial growth, the gas different from a gas used as an N source of the well layer is supplied.Type: ApplicationFiled: January 27, 2010Publication date: August 18, 2011Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Yusuke Yoshizumi, Masaki Ueno, Takao Nakamura, Toshio Ueda, Eiryo Takasuka, Yasuhiko Senda
-
Publication number: 20100173483Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.Type: ApplicationFiled: March 16, 2010Publication date: July 8, 2010Applicant: Sumitomo Electric Industries, Ltd.Inventors: Masaki Ueno, Eiryo Takasuka, Soo-Jin Chua, Peng Chen
-
Publication number: 20090302308Abstract: A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x<y<z?1.Type: ApplicationFiled: September 22, 2006Publication date: December 10, 2009Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Soo-Jin Chua, Peng Chen, Zhen Chen, Eiryo Takasuka
-
Publication number: 20090206320Abstract: A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) by introducing bursts of at least one of Timethylindium (TMIn), Triethylindium (TEIn) and Ethyldimethylindium (EDMIn), which serve as nuclei for the growth of QDs in QWs. The diode can thus radiate white light ranging from 400 nm to 750 nm by adjusting the In burst parameters.Type: ApplicationFiled: March 24, 2005Publication date: August 20, 2009Applicant: Agency for Science, Technology and ResearchInventors: Soo Jin Chua, Peng Chen, Eiryo Takasuka
-
Publication number: 20090197399Abstract: Provided are a method of growing a group III-V compound semiconductor, and method of manufacturing a light-emitting device and an electron device, in which risks are reduced and nitrogen can be efficiently supplied at low temperatures. The method of growing a group III-V compound semiconductor includes the following processes. First, gas containing at least one selected from the group consisting of monomethylamine and monoethylamine is prepared as a nitrogen raw material. Then, the group III-V compound semiconductor is grown using the gas by vapor phase growth.Type: ApplicationFiled: January 30, 2009Publication date: August 6, 2009Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takao Nakamura, Masaki Ueno, Toshio Ueda, Eiryo Takasuka, Yasuhiko Senda