Patents by Inventor Eisuke Morisaki
Eisuke Morisaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160148829Abstract: A transferring device includes a supporting part configured to support a substrate holder, an elevation member configured to raise and lower a substrate at a substrate holding portion of the substrate holder, and a shielding member configured to be raised and lowered by the elevation member. The shielding member is interposed between the substrate and the elevation member when the elevation member receives the substrate. When the substrate is held on the substrate holding portion, the shielding member shields, at a backside of the substrate, a hole in the substrate holder through which the elevation member is inserted. In a state where the elevation member is raised, the substrate is mounted on the shielding member, or the substrate on shielding member is transferred therefrom.Type: ApplicationFiled: April 22, 2014Publication date: May 26, 2016Inventors: Eisuke MORISAKI, Tomohisa KIMOTO
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Publication number: 20140174364Abstract: A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element.Type: ApplicationFiled: July 23, 2012Publication date: June 26, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Ken Nakao, Eisuke Morisaki
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Patent number: 8696814Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.Type: GrantFiled: November 29, 2007Date of Patent: April 15, 2014Assignees: Tokyo Electron Limited, Rohm Co., Ltd.Inventors: Eisuke Morisaki, Hirokatsu Kobayashi, Jun Yoshikawa, Ikuo Sawada, Tsunenobu Kimoto, Noriaki Kawamoto, Masatoshi Aketa
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Patent number: 8440270Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.Type: GrantFiled: November 29, 2007Date of Patent: May 14, 2013Assignee: Tokyo Electron LimitedInventors: Eisuke Morisaki, Hirokatsu Kobayashi, Jun Yoshikawa
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Patent number: 8409460Abstract: An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.Type: GrantFiled: February 21, 2008Date of Patent: April 2, 2013Assignee: Tokyo Electron LimitedInventors: Hiraku Ishikawa, Tadakazu Murai, Eisuke Morisaki
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Patent number: 8328943Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.Type: GrantFiled: November 29, 2007Date of Patent: December 11, 2012Assignee: Tokyo Electron LimitedInventors: Eisuke Morisaki, Hirokatsu Kobayashi, Masayuki Harashima
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Publication number: 20120128892Abstract: A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.Type: ApplicationFiled: May 24, 2011Publication date: May 24, 2012Applicants: Tokyo Electron Limited, HYOGO PREFECTUREInventors: Noriaki TOYODA, Isao Yamada, Masaki Narushima, Masayuki Harashima, Eisuke Morisaki
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Publication number: 20100105213Abstract: An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.Type: ApplicationFiled: February 21, 2008Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Hiraku Ishikawa, Tadakazu Murai, Eisuke Morisaki
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Publication number: 20100092666Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.Type: ApplicationFiled: November 29, 2007Publication date: April 15, 2010Applicant: Tokyo Electron LimitedInventors: Eisuke Morisaki, Hirokatsu Kobayashi, Jun Yoshikawa, Ikuo Sawada, Tsunenobu Kimoto, Noriaki Kawamoto, Masatoshi Aketa
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Publication number: 20100047448Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.Type: ApplicationFiled: November 29, 2007Publication date: February 25, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Eisuke Morisaki, Hirokatsu Kobayashi, Masayuki Harashima
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Publication number: 20100015359Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.Type: ApplicationFiled: November 29, 2007Publication date: January 21, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Eisuke Morisaki, Hirokatsu Kobayashi, Jun Yoshikawa
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Patent number: 6630991Abstract: A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.Type: GrantFiled: April 20, 2001Date of Patent: October 7, 2003Assignee: Tokyo Electron LimitedInventors: Masayuki Kitamura, Eisuke Morisaki, Yun Mo
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Patent number: 6488407Abstract: The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector 1 of a radius R disposed opposite to the wafer (W), and a probe (2) disposed in a through hole formed in the reflector (1). The probe (2) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector (1). An error in measured radiation intensity of radiation falling the probe (2) due to light that enters a space between the wafer (W) and the reflector (1) and a space between the reflector (1) and the probe (2) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.Type: GrantFiled: March 17, 2000Date of Patent: December 3, 2002Assignee: Tokyo Electron LimitedInventors: Masayuki Kitamura, Eisuke Morisaki, Nobuaki Takahashi, Takashi Shigeoka
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Patent number: 6473993Abstract: A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part.Type: GrantFiled: March 30, 2000Date of Patent: November 5, 2002Assignee: Tokyo Electron LimitedInventors: Yasushi Yagi, Takeshi Sakuma, Wataru Okase, Masayuki Kitamura, Hironori Yagi, Eisuke Morisaki
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Patent number: 6467952Abstract: A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation.Type: GrantFiled: March 16, 2000Date of Patent: October 22, 2002Assignee: Tokyo Electron LimitedInventors: Eisuke Morisaki, Masayuki Kitamura, Nobuaki Takahashi, Takashi Shigeoka
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Publication number: 20020106000Abstract: A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation.Type: ApplicationFiled: March 16, 2000Publication date: August 8, 2002Inventors: Eisuke Morisaki, Masayuki Kitamura, Nobuaki Takahashi, Takashi Shigeoka
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Publication number: 20020020696Abstract: A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.Type: ApplicationFiled: April 20, 2001Publication date: February 21, 2002Inventors: Masayuki Kitamura, Eisuke Morisaki, Yun Mo
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Patent number: D766850Type: GrantFiled: September 12, 2014Date of Patent: September 20, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Eisuke Morisaki, Wataru Machiyama, Hirokatsu Kobayashi, Masayuki Harashima, Yukio Sano