Patents by Inventor Eisuke NARITA

Eisuke NARITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflective photomask blank and reflective photomask
    Patent number: 11906896
    Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: February 20, 2024
    Assignee: TOPPAN PHOTOMASK CO., LTD.
    Inventors: Toru Komizo, Norihito Fukugami, Genta Watanabe, Eisuke Narita
  • REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
    Publication number: 20220011662
    Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.
    Type: Application
    Filed: November 1, 2019
    Publication date: January 13, 2022
    Inventors: Toru KOMIZO, Norihito FUKUGAMI, Genta WATANABE, Eisuke NARITA