Patents by Inventor Ekaterina Yurchuk

Ekaterina Yurchuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric memory cell for an integrated circuit
    Patent number: 9053802
    Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: June 9, 2015
    Assignee: NaMLab gGmbH
    Inventors: Stefan Ferdinand Müller, Ekaterina Yurchuk, Uwe Schröder
  • FERROELECTRIC MEMORY CELL FOR AN INTEGRATED CIRCUIT
    Publication number: 20140355328
    Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).
    Type: Application
    Filed: June 4, 2013
    Publication date: December 4, 2014
    Inventors: Stefan Ferdinand Müller, Ekaterina Yurchuk, Uwe Schröder