Abstract: Devices and/or computer-implemented methods to facilitate a programmable and/or reprogrammable quantum circuit are provided. According to an embodiment, a device can comprise a superconducting coupler device having a superconducting fuse device that is used to alter the coupling of a first quantum computing element and a second quantum computing element.

Abstract: One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a superconducting device that can be operated with minimal electric field energy coupling at surface layers of the superconducting device and/or that can have a small footprint. According to one embodiment, a device can comprise a Josephson junction located between a first capacitor portion and a second capacitor portion of a capacitor, wherein at least a trenched section of the first capacitor portion is located beneath a surface of a substrate, and wherein at least a trenched section of the second capacitor portion is located beneath the surface of the substrate. According to another embodiment, a device can comprise a capacitor disposed within a substrate layer and the capacitor comprising a pair of material-filled trenches in the substrate layer, and a Josephson junction coupled to the capacitor.

Abstract: Techniques regarding lithographic processes for fabricating Josephson junctions are provided. For example, one or more embodiments described herein can comprise a method that can include depositing a first resist layer onto a second resist layer. The first resist layer can include a bridge portion that defines an opening for forming a Josephson junction. The method can also comprise depositing a third resist layer onto the bridge portion. The third resist layer can shield the opening from an angled deposition of a superconducting material during fabrication of the Josephson junction.

Abstract: Devices and/or computer-implemented methods to facilitate a programmable and/or reprogrammable quantum circuit are provided. According to an embodiment, a device can comprise a superconducting coupler device having a superconducting fuse device that is used to alter the coupling of a first quantum computing element and a second quantum computing element.

Abstract: Techniques regarding lithographic processes for fabricating Josephson junctions are provided. For example, one or more embodiments described herein can comprise a method that can include depositing a first resist layer onto a second resist layer. The first resist layer can include a bridge portion that defines an opening for forming a Josephson junction. The method can also comprise depositing a third resist layer onto the bridge portion. The third resist layer can shield the opening from an angled deposition of a superconducting material during fabrication of the Josephson junction.

Abstract: Embodiments of the present invention provide increased distance between vias and neighboring metal lines in a back end of line (BEOL) structure. A copper alloy seed layer is deposited in trenches that are formed in a dielectric layer. The trenches are then filled with copper. An anneal is then performed to create a self-forming barrier using a seed layer constituent, such as manganese, as the manganese is drawn to the dielectric layer during the anneal. The self-forming barrier is disposed on a shoulder region of the dielectric layer, increasing the effective distance between the via and its neighboring metal lines.

Abstract: Embodiments of the present invention provide increased distance between vias and neighboring metal lines in a back end of line (BEOL) structure. A copper alloy seed layer is deposited in trenches that are formed in a dielectric layer. The trenches are then filled with copper. An anneal is then performed to create a self-forming barrier using a seed layer constituent, such as manganese, as the manganese is drawn to the dielectric layer during the anneal. The self-forming barrier is disposed on a shoulder region of the dielectric layer, increasing the effective distance between the via and its neighboring metal lines.

Abstract: Embodiments of the present invention provide increased distance between vias and neighboring metal lines in a back end of line (BEOL) structure. A copper alloy seed layer is deposited in trenches that are formed in a dielectric layer. The trenches are then filled with copper. An anneal is then performed to create a self-forming barrier using a seed layer constituent, such as manganese, as the manganese is drawn to the dielectric layer during the anneal. The self-forming barrier is disposed on a shoulder region of the dielectric layer, increasing the effective distance between the via and its neighboring metal lines.

Abstract: Embodiments of the present invention provide increased distance between vias and neighboring metal lines in a back end of line (BEOL) structure. A copper alloy seed layer is deposited in trenches that are formed in a dielectric layer. The trenches are then filled with copper. An anneal is then performed to create a self-forming barrier using a seed layer constituent, such as manganese, as the manganese is drawn to the dielectric layer during the anneal. The self-forming barrier is disposed on a shoulder region of the dielectric layer, increasing the effective distance between the via and its neighboring metal lines.

Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

Abstract: Interconnect structures are fabricated by methods that comprise depositing a thin conformal passivation dielectric and/or diffusion barrier cap and/or hard mask by an atomic layer deposition or supercritical fluid based process.

Abstract: Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

Abstract: In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

Abstract: Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0.

Abstract: Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0.

Abstract: Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

Abstract: Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0.

Abstract: Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

Abstract: Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0.