Abstract: One example is an antenna structure with a metamaterial having a flexible metamaterial layer, a two-dimensional antenna layer and a spacer layer. The flexible metamaterial layer has a metamaterial thickness allowing the metamaterial layer to be attached to a curved conducting surface of a vehicle. The metamaterial layer is formed with a two-dimensional array of elements having a passive magnetic property with the array of elements formed with elongated individual elements each having a top end and a bottom end. The elongated individual elements have curved outer surfaces between the top end and the bottom end. The two-dimensional antenna layer receives electromagnetic signals. The spacer layer is located between the metamaterial layer and the antenna layer separating the metamaterial layer and the antenna layer.

Abstract: One example is an antenna structure with a metamaterial having a flexible metamaterial layer, a two-dimensional antenna layer and a spacer layer. The flexible metamaterial layer has a metamaterial thickness allowing the metamaterial layer to be attached to a curved conducting surface of a vehicle. The metamaterial layer is formed with a two-dimensional array of elements having a passive magnetic property with the array of elements formed with elongated individual elements each having a top end and a bottom end. The elongated individual elements have curved outer surfaces between the top end and the bottom end. The two-dimensional antenna layer receives electromagnetic signals. The spacer layer is located between the metamaterial layer and the antenna layer separating the metamaterial layer and the antenna layer.

Abstract: A spintronic electronic apparatus having a multilayer structure. The apparatus includes a substrate, having disposed in succession upon the substrate; a bottom interface layer; a pinned layer; a tunneling barrier; a free layer; and a top interface layer, wherein the apparatus operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession.

Abstract: A spintronic electronic apparatus having a multilayer structure. The apparatus includes a substrate, having disposed in succession upon the substrate; a bottom interface layer; a pinned layer; a tunneling barrier; a free layer; and a top interface layer, wherein the apparatus operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession.