Abstract: The invention relates to a resistive memory including resistive elements, the resistance of each resistive element being capable of alternating between a high value and a low value, the memory further including a device for switching the resistance of at least one selected resistive element between the high and low values. The device includes a first circuit capable of circulating a first current through a first reference resistive component (RLRS), a second circuit capable of circulating a second current proportional to the first current through the selected resistive element, a third circuit capable of detecting the switching of the resistance of the selected resistive element from the comparison of the voltage across the first reference resistive component with the voltage across the selected resistive element, and a fourth circuit capable of interrupting the second current on detection of the switching.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Abstract: A method of programming a resistive random access memory switching from an insulating state to a conducting state, the memory including first and second electrodes separated by an electrically insulating material, and switching for the first time from the insulating state to the conducting state by applying a threshold voltage between the electrodes, with a first limited current flowing in the memory after the switching, the first limited current being limited by a current limitation device, the method including applying a voltage between the electrodes for the switching of the resistive random access memory from a highly resistive conducting state to a low resistive conducting state, with a second limited current flowing in the resistive random access memory after the switching, the second limited current being limited by the current limitation device, the second limited current being chosen strictly less than the first limited current.

Abstract: The invention relates to a resistive memory including resistive elements, the resistance of each resistive element being capable of alternating between a high value and a low value, the memory further including a device for switching the resistance of at least one selected resistive element between the high and low values. The device includes a first circuit capable of circulating a first current through a first reference resistive component (RLRS), a second circuit capable of circulating a second current proportional to the first current through the selected resistive element, a third circuit capable of detecting the switching of the resistance of the selected resistive element from the comparison of the voltage across the first reference resistive component with the voltage across the selected resistive element, and a fourth circuit capable of interrupting the second current on detection of the switching.

Abstract: The invention relates to a resistive memory (5) including resistive elements, the resistance of each resistive element being capable of alternating between a high value in a first range of values and a low value in a second range of values smaller than the high value, the memory further comprising a device (14) for switching the resistance of at least one resistive element selected from among the resistive elements between the high and low values, the device including a first circuit capable of applying an increasing voltage across the selected resistive element while the selected resistive element is at the high value or at the low value, a second circuit capable of detecting the switching of the resistance of the selected resistive element, and a third circuit capable of interrupting the current flowing through the selected resistive element on detection of the switching.

Abstract: A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.

Abstract: A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.

Abstract: A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Abstract: The invention more particularly relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, with said resistive memory cell being able to be electrically modified so as to switch from a first resistive state to a second resistive state (state LRS) wherein the resistance (RON) of the memory cell is at least ten times smaller than the resistance (ROFF) of the memory cell in the HRS state, in the LRS state the first electrode being so arranged as to supply metal ions intended to form at least a conductive filament through said commutation layer, with the cell being characterised in that, in the LRS state, the memory cell is conductive for a range of voltages between 0 Volts and VREST 2 .