Patents by Inventor Elisabeth C. Rodenburg

Elisabeth C. Rodenburg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8138087
    Abstract: An integrated circuit is provided that comprises a substrate of silicon and an interconnect in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallization layer on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: March 20, 2012
    Assignee: NXP B.V.
    Inventors: Stephane Morel, Arnoldus Den Dekker, Elisabeth C. Rodenburg, Eric C. E. Van Grunsven
  • Publication number: 20090267232
    Abstract: An integrated circuit (100) is provided that comprises a substrate (140) of silicon and an interconnect (130) in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallisation layer (120) on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.
    Type: Application
    Filed: September 17, 2007
    Publication date: October 29, 2009
    Applicant: NXP, B.V.
    Inventors: Stephane Morel, Arnoldus Den Dekker, Elisabeth C. Rodenburg, Eric C. E. Van Grunsven