Abstract: An electroluminescent vehicle lamp made with a lens plate, a back plate, electroluminescent sheet, first electrical connector, second electrical connector is disclosed. The lamp has decreased volume and weight due to its small thickness. The electroluminescent vehicle lamp provides a vehicle signal lamp with a small thickness that is otherwise conformal with the surface of a vehicle. A particular advantage of the lamp structure is that the vehicle body needs only minimal forming to accommodate the positioning of the lamp, and little interior space in the vehicle is required. Two or more color regions can be formed in one housing. Two different states of appearance such that the device can exhibit a bright operating color (red, yellow, etc.) and yet blend in with the rest of the vehicle exterior in the non-operating mode.

Abstract: A method of preparing an electrically insulating polymer substrate, particularly those containing an aromatic group, for the reception of an electrically conductive pattern, said substrate having a glass transition temperature or a softening temperature, comprises the steps of: performing a first cleaning of the substrate; heating the substrate in a nitrogen atmosphere for about 3 hours at a temperature of about 20.degree. C. below the glass transition temperature or the softening temperature of the substrate; cooling the substrate to room temperature; roughening the surface of the substrate by, for example, etching said substrate in a chromic acid-containing solution for about 3 minutes at a temperature of between 65.degree. C. and 70.degree. C.; and performing a second cleaning and drying of the substrate.

Abstract: A method of preparing ceramic monolithic structures with an internal cavity and passageways is described. A thin sheet of a ceramic material is formed by spreading the material on a glass plate with a doctor blade. Individual sheets of the material are cut or punched to form predetermined holes, channels or various shapes therein. These individual sheets are then stacked to form a layered structure. A supporting media such as paraffin wax is injected into the holes and channels to completely fill them with the media. The layered structure is then pressed by unipressing and/or isostatic pressing followed by a prefiring step to remove the supporting media. Once the supporting media had been completely removed, the layered structure is then sintered to form a monolithic structure containing precise predetermined internal cavity and passageways.

Abstract: A process for making a homogeneous yttria-alumina doped silicon nitride article is described. A uniform coating of yttria and alumina is applied to the surface of silicon nitride particles by a chemical application of the hydroxides of yttrium and aluminum followed by drying and a subsequent conversion of the hydroxides to the corresponding oxides. The resulting powder is formed into an article and pressureless sintered to a density greater than 99% of theoretical.

Abstract: A method of preparing ceramic monolithic structures with an internal cavity and passageways is described. A thin sheet of a ceramic material is formed by spreading the material on a glass plate with a doctor blade. Individual sheets of the material are cut or punched to form predetermined holes, channels or various shapes therein. These individual sheets are then stacked to form a layered structure. A supporting media such as paraffin wax is injected into the holes and channels to completely fill them with the media. The layered structure is then pressed by unipressing and/or isostatic pressing followed by a prefiring step to remove the supporting media. Once the supporting media had been completely removed, the layered structure is then sintered to form a monolithic structure containing precise predetermined internal cavity and passageways.

Abstract: A method of preparing polycrystalline photoactive semiconductor electrodes utilizable in photoassisted oxidation reactions comprises the steps of (1) providing a suspension of finely divided mixture of titanium dioxide and at least one oxide of a metal selected from the group consisting of aluminum and the d-electron transition metals other than titanium, (2) applying the suspension to the surface of a metal body, (3) sintering the applied coating to the metal body.

Abstract: Photoactive titanium dioxide based semiconductor electrodes utilizable in photoassisted oxidation reactions in an electrochemical cell comprise thin films of polycrystalline titanium dioxide modified with one or more materials consisting of oxides of aluminum or of a d-electron transition metal other than titanium. Oxides in which the metal is in a chemical oxidation state other than +4, which possess some solid state solubility in titanium dioxide, and an impurity energy level band lying within the energy band gap of titanium dioxide function effectively as modifiers.The electrode comprises a uniform film of titanium dioxide mixed with up to 50 mole percent of the modifier sintered to a suitable metal body. In an alternative embodiment of the invention, the electrode comprises a film of titanium dioxide sintered to a titanium metal body with the modifier distributed throughout the titanium dioxide film with a concentration gradient having a minimum next to the surface of the metal body.

Abstract: A method of preparing doped or modified polycrystalline p- or n-type titanium dioxide semiconductor electrodes utilizable in photoassisted oxidation reactions or photoelectrochemical cells is provided. The method comprises the steps of (1) applying to a titanium substrate a thin film of one or more oxide of metals selected from the group consisting of aluminum and the d-electron transition metals other than titanium, and (2) heating the coated titanium body in an oxygen-containing atmosphere at an elevated temperature, preferably below about 800.degree. C., to sinter the coating to the titanium substrate. The sintering step produces on the titanium substrate a thin photoactive film of titanium dioxide containing a uniform concentration gradient of the previously-applied modifying oxide.

Abstract: Process for the preparation of reactive tungsten comprising reducing a tungsten compound in a reducing atmosphere at temperatures ranging from about 450.degree. C to 700.degree. C. The reactive tungsten can be readily converted to WC, W.sub.2 C or WN.