Patents by Inventor Elizabeth K. Michael

Elizabeth K. Michael has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLYARYLENE RESINS
    Publication number: 20180171069
    Abstract: Polyarylene polymers formed from an aromatic dialkyne monomer having a solubility enhancing moiety and having relatively high weight average molecular weights and a relatively low polydispersity show improved solubility in certain organic solvents and are useful in forming relatively thick dielectric material layers in a single coating step.
    Type: Application
    Filed: November 16, 2017
    Publication date: June 21, 2018
    Inventors: Qing Min Wang, Elizabeth K. Michael-Sapia, Christopher Gilmore, Ping Ding, Young-Seok Kim
  • POLYARYLENE COMPOSITIONS AND METHODS
    Publication number: 20180162992
    Abstract: Polyarylene oligomer compositions having improved adhesion to surfaces as compared to conventional polyarylene oligomers are useful in forming dielectric material layers in electronics applications.
    Type: Application
    Filed: October 13, 2017
    Publication date: June 14, 2018
    Inventors: Christopher Gilmore, Aaron A. Rachford, Elizabeth K. Michael-Sapia, Dong Eun Lee, Jieqian Zhang, Ping Ding, Young-Seok Kim
  • Single phase lead-free cubic pyrochlore bismuth zinc niobate-based dielectric materials and processes for manufacture
    Patent number: 9748019
    Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: August 29, 2017
    Assignee: The Penn State Research Foundation
    Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry
  • Single phase lead-free cubic pyrochlore bismuth zinc niobate-based dielectric materials and processes for manufacture
    Patent number: 9520207
    Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
    Type: Grant
    Filed: May 11, 2015
    Date of Patent: December 13, 2016
    Assignees: The Penn State University, National Science Foundation
    Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry
  • SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
    Publication number: 20160318806
    Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
    Type: Application
    Filed: July 12, 2016
    Publication date: November 3, 2016
    Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry
  • SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
    Publication number: 20150325331
    Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
    Type: Application
    Filed: May 11, 2015
    Publication date: November 12, 2015
    Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry