Abstract: A lighting device and a lighting system are disclosed. In an embodiment, a lighting device includes at least one optoelectronic semiconductor chip, two contacts configured to couple the lighting device to a DC voltage and a driver circuit interconnected in series with the at least one semiconductor chip in a string, wherein the driver circuit comprises a monolithic, unhoused controller, wherein the driver circuit is configured to adjust a current for operating the at least one semiconductor chip, and wherein the string extends between the two contacts in an electrically coupling way.

Abstract: A lighting device and a lighting system are disclosed. In an embodiment, a lighting device includes at least one optoelectronic semiconductor chip, two contacts configured to couple the lighting device to a DC voltage and a driver circuit interconnected in series with the at least one semiconductor chip in a string, wherein the driver circuit comprises a monolithic, unhoused controller, wherein the driver circuit is configured to adjust a current for operating the at least one semiconductor chip, and wherein the string extends between the two contacts in an electrically coupling way.

Abstract: A mounting structure for a light guide having a core and a longitudinal axis, wherein the mounting structure includes a holder into which the light guide is insertable obliquely or perpendicular to the longitudinal axis, and the mounting structure is configured to provide an optical coupling to the core of the light guide.

Abstract: A mounting structure for a light guide having a core and a longitudinal axis, wherein the mounting structure includes a holder into which the light guide is insertable obliquely or perpendicular to the longitudinal axis, and the mounting structure is configured to provide an optical coupling to the core of the light guide.

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.

Abstract: A method for operating a vehicle that can be operated in a manual driving mode and in an automatic driving mode and has at least one foot actuation device, which in the manual driving mode projects from a plane of a resting surface and can be actuated by a vehicle driver, wherein a switch from the manual driving mode to the automatic driving mode is detected and thereupon the at least one foot actuation device and/or the resting surface are moved relative to one another in such a way that the at least one foot actuation device and the resting surface form a substantially continuous plane or the resting surface forms a substantially continuous plane and the foot actuation device is covered by the plane of the resting surface.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.

Abstract: A method for operating a vehicle that can be operated in a manual driving mode and in an automatic driving mode and has at least one foot actuation device, which in the manual driving mode projects from a plane of a resting surface and can be actuated by a vehicle driver, wherein a switch from the manual driving mode to the automatic driving mode is detected and thereupon the at least one foot actuation device and/or the resting surface are moved relative to one another in such a way that the at least one foot actuation device and the resting surface form a substantially continuous plane or the resting surface forms a substantially continuous plane and the foot actuation device is covered by the plane of the resting surface.

Abstract: A vehicle is provided that includes at least one vehicle seat, which has a backrest, the inclination of which can be adjusted, and a control device, by means of which the backrest can be controlled to a lying position having a greater angle of inclination at the request of a seat user. The control device has a signal connection to a monitoring device, which detects at least one belt parameter, by means of which it can be determined whether a flawless belt course of a safety belt being worn by a seat user is ensured in the lying position.

Abstract: A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

Abstract: A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

Abstract: An LED illumination device (10) having a first LED chip (1) and a second LED chip (2) is described, wherein the first LED chip (1) is suitable to emit radiation having a first emission characteristic (A1) and the second LED chip (2) is suitable to emit radiation having a second emission characteristic (A2). The first emission characteristic (A1) and the second emission characteristic (A2) have temperature-dependent changes (?A1T, ?A1T), wherein the temperature-dependent change (?A1T) in the first emission characteristic (A1) and the temperature-dependent change (?A2T) in the second emission characteristic (A2) are, in operation, at least partially compensated for or are synchronised with respect to each other such that the chromaticity co-ordinate remains stable. Furthermore, a method for producing such an illumination device (10) is described.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.

Abstract: A vehicle is provided that includes at least one vehicle seat, which has a backrest, the inclination of which can be adjusted, and a control device, by means of which the backrest can be controlled to a lying position having a greater angle of inclination at the request of a seat user. The control device has a signal connection to a monitoring device, which detects at least one belt parameter, by means of which it can be determined whether a flawless belt course of a safety belt being worn by a seat user is ensured in the lying position.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

Abstract: A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer.

Abstract: A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.