Abstract: A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.

Abstract: A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

Abstract: A semiconductor component with a pn junction comprises a semiconductor body comprising a front side and an edge region. A pn junction is formed fashion in curved fashion in the edge region of the semiconductor body. An edge structure comprising depressions is also provided in the edge region of the semiconductor body. The depressions may comprise, for example, a number of capillaries which extend into the semiconductor body proceeding from the front side of the semiconductor body.

Abstract: A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.

Abstract: The invention realizes a high-voltage diode with a turn-off behavior that is optimized in a targeted manner. By means of an irradiation either only from the side of the n+-conducting cathode emitter (6) or from both sides, i.e. from the side of the n+-conducting cathode emitter (6) and from the side of the p+-conducting anode emitter (4), it is possible to obtain a soft recovery behavior of the component by means of a targeted setting of the lifetime of the charge carriers without in this case increasing the on-state losses.

Abstract: A semiconductor diode (1, 1?) has an anode (2), a cathode (3) and a semiconductor volume (7) provided between anode (2) and cathode (3). A plurality of semiconductor zones (81 to 84) are formed in the semiconductor volume (7), which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode (3). The semiconductor zones are spaced apart from the cathode (3).

Abstract: A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).

Abstract: A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region adjoining the first conduction type region at the third surface. A trench extending from the first surface into the semiconductor body, the trench defined by a trench bottom and an arcuately shaped sidewall.

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side (R) of a substrate (S), a rear side emitter (14, 14a) or a cathode emitter (24) and, over that, a rear side metal layer (15; 25) that at least partly covers the latter, is defined by the fact that, in the edge region (11; 21) of the component (1-4), provision is made of injection attenuation means (18; 28; 14a; 15a) for reducing the charge carrier injection from the rear side emitter (14, 14a) or the cathode emitter (24) into said edge section (11; 21).