Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures.

Abstract: For producing a superconducting circuit, a film (12) consisting of a cuprate superconductor material is generated on a substrate (13), wherein the superconductor material is in the superconducting state at an operating temperature of the superconducting circuit to be produced, and then the film is irradiated by projecting an energetic ion radiation onto the film through a mask (11) positioned at a distance from the film and protecting selected areas of the film from being irradiated, the mask comprising a structure pattern transparent to the ion radiation but otherwise opaque to the ion radiation. Areas (14) not protected by the mask are irradiated with an ion dose being sufficiently low to avoid degradation of the crystal structure of the first film but being sufficient to inhibit superconductivity of the film with respect to the operating temperature; ion doses are preferably in the range of 0.8·1015 and 2·1015 ions/cm2 or below.

Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures.

Abstract: A field-ionization source, comprising array of emitter electrodes (31) and counter electrodes (32) positioned at a distance from the base (P1) of the emitter electrodes. The emitter electrodes, ending in emitter tips (61), extend from their bases towards corresponding openings (62) of the counter electrodes and are adapted to be connected to a positive electric high voltage with respect to the counter electrodes. At the emitter tips (61), gas species provided from a source substance are field-ionized by means of the high voltage and ions thus produced are accelerated through the openings (61, 41). A distribution system (43, S2) is provided to distribute said source substance from a supply to the space (S1) around the emitter tips.