Abstract: A method and apparatus are disclosed for manufacturing large Monolithic Microwave Integrated Circuit (MMIC) arrays. MMIC elements are manufactured on a substrate to form a MMIC module and first conductive vias are created in the substrate at locations corresponding to contact points for the MMIC. The MMIC module is then secured to a multi-layered ceramic backplate structure for physical rigidity and electrical interconnection. The MMIC module uses a conductive material, such as chrome, to fill or coat the vias to provide electrical contact with MMIC contact pads. Each layer of the multi-layered backplate structure has an electrical interconnection circuit or network formed thereon, and conductive vias extending through the layer at locations corresponding to preselected vias in adjacent layers and electrical contacts for MMIC modules.

Abstract: Deposition of ordered polycrystalline films of zinc oxide and other materials having a strongly preferred crystal growth direction and a high degree of symmetry about the preferred direction is achieved consistently by disposing a charged electrode in a sputtering chamber to limit bombardment of the film and underlying substrate by charged particles.

Abstract: A continuous layer of transparent material is formed on a base. A desired pattern of transparent electrically conductive material is included in the layer. The regions of the layer not included in the conductor pattern are insulative. The insulative material is preferably an indium oxide. Tin is preferably used as a dopant in the indium oxide to make it electrically conductive according to the desired pattern. The electrically conductive pattern is first formed in metallic tin. The tin pattern is diffused into a layer of metallic indium. The layer is then thermally oxidized to form the electrically conductive pattern as indium-tin-oxide (ITO) in indium sesquioxide, In.sub.2 O.sub.3, an insulator.

Abstract: A continuous layer of transparent material is formed on a base. A desired pattern of transparent electrically conductive material is included in the layer. The regions of the layer not included in the conductor pattern are insulative. The insulative material is preferably an indium oxide. Tin is preferably used as a dopant in the indium oxide to made it electrically conductive according to the desired pattern. The electrically conductive pattern is first formed in metallic tin. The tin pattern is diffused into a layer of metallic indium. The layer is then thermally oxidized to form the electrically conductive pattern as indium-tin-oxide (ITO) in indium sesquioxide, In.sub.2 O.sub.3, an insulator.