Patents by Inventor Elsa Reichmanis

Elsa Reichmanis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030207595
    Abstract: A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 6, 2003
    Inventors: Omkaram Ralamasu, Chien-Shing Pai, Elsa Reichmanis, Shu Yang
  • Publication number: 20030202256
    Abstract: A tunable microlens uses a layer of photo-conducting material which results in a voltage differential between at least one of a plurality of electrodes and a droplet of conducting liquid when a light beam is incident upon the photo-conducting material. Such a droplet, which forms the optics of the microlens, moves toward an electrode with a higher voltage relative to other electrodes in the microlens. In one embodiment, when a misalignment of the beam and microlens occurs, an electronic circuit creates the aforementioned differential. In a second embodiment, two layers of electrodes are used, an upper layer and a lower layer. Each electrode in a lower layer of electrodes is electrically coupled to an electrode in the upper layer directly opposed to the lower-layer electrode. When the light beam is misaligned with the microlens, a voltage differential between the droplet and the electrodes in the upper layer automatically causes the droplet, and hence the microlens, to realign itself with the beam.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Zhenan Bao, Timofei Nikita Kroupenkine, Alan Michael Lyons, Mary Louise Mandich, Louis Thomas Manzione, Elsa Reichmanis, Shu Yang
  • Patent number: 5879857
    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation.
    Type: Grant
    Filed: March 7, 1997
    Date of Patent: March 9, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Edwin Arthur Chandross, Francis Michael Houlihan, Omkaram Nalamasu, Elsa Reichmanis, Thomas Ingolf Wallow
  • Patent number: 5843624
    Abstract: The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: December 1, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Francis Michael Houlihan, Omkaram Nalamasu, Elsa Reichmanis, Thomas Ingolf Wallow
  • Patent number: 5756266
    Abstract: A lithographic process for fabricating a device is disclosed. An area of radiation sensitive material is formed on a substrate. The radiation sensitive material contains a polymeric component The polymeric component is the copolymerization product of a maleimide monomer and at least two other monomers. Acid labile groups are pendant to one of the monomers with which the maleimide monomer is copolymerized. The acid labile groups are pendant to less than 50 mole percent of the monomers that make up the copolymer. The acid labile groups are not pendant to the maleimide monomer.The radiation sensitive material is patternwise exposed to radiation after it is formed on the substrate. The patternwise exposure transfers an image into the radiation sensitive material. The image is developed into a pattern in the radiation sensitive material. The pattern is then transferred into the substrate.
    Type: Grant
    Filed: July 15, 1996
    Date of Patent: May 26, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Mary Ellen Galvin-Donoghue, Elsa Reichmanis
  • Patent number: 5750312
    Abstract: It has been found that surface reactions with basic materials such as amines found in the processing environment during lithographic processing contribute to a loss of linewidth control for resists such as chemically amplified resists. This loss in linewidth results from the reaction of the acid generated by exposing radiation with, for example, the amine resulting in a lack of chemical reaction where such reaction is desired. The problem is solved in one embodiment by employing an acid containing barrier layer on the resist.
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: May 12, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Edwin Arthur Chandross, Omkaram Nalamasu, Elsa Reichmanis, Gary Newton Taylor, Larry Flack Thompson
  • Patent number: 5741629
    Abstract: Polymers suitable for chemically amplified resists based on styrene chemistry are advantageously formed with a meta substituent on the phenyl ring of the styrene moiety. Additionally, polymers for such applications including, but not limited to, meta substituted polymers are advantageously formed by reacting a first monomer having a first protective group with a second monomer having a second protective group. After polymerization, the second protective group is removed without substantially affecting the first protective group. For example, if the first protective group is an alkoxy carbonyl group, and the second protective group is a silyl ether group, treatment with a lower alcohol with trace amounts of acid transforms the silyl group into an OH-moiety without affecting the alkoxy carbonyl group.
    Type: Grant
    Filed: October 15, 1996
    Date of Patent: April 21, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Edwin Arthur Chandross, Janet Mihoko Kometani, Omkaram Nalamasu, Elsa Reichmanis, Kathryn Elizabeth Uhrich
  • Patent number: 5200544
    Abstract: A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.
    Type: Grant
    Filed: January 24, 1992
    Date of Patent: April 6, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Francis M. Houlihan, Thomas X. Neenan, Elsa Reichmanis
  • Patent number: 5135838
    Abstract: A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.
    Type: Grant
    Filed: August 9, 1990
    Date of Patent: August 4, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Francis M. Houlihan, Thomas X. Neenan, Elsa Reichmanis
  • Patent number: 4996136
    Abstract: Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.
    Type: Grant
    Filed: February 24, 1989
    Date of Patent: February 26, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Francis M. Houlihan, Elsa Reichmanis, Larry F. Thompson
  • Patent number: 4701342
    Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.
    Type: Grant
    Filed: March 6, 1986
    Date of Patent: October 20, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Anthony E. Novembre, Elsa Reichmanis
  • Patent number: 4666820
    Abstract: Photosensitive bodies that are sensitive to ultraviolet radiation and that exhibit excellent contrast are formed from base soluble polymers such as poly(methyl methacrylate-co-methacrylic acid) physically mixed with base insoluble materials such as o,o'-dinitrobenzyl esters. The base insoluble esters decompose upon irradiation to form base soluble entities in the irradiated regions. These irradiated portions are then soluble in basic solutions that are used to develop the desired image.
    Type: Grant
    Filed: August 12, 1985
    Date of Patent: May 19, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Laboratories
    Inventors: Edwin A. Chandross, Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Patent number: 4551416
    Abstract: Photosensitive bodies that are sensitive to ultraviolet radiation and that exhibit excellent contrast are formed from base soluble polymers such as poly(methyl methacrylate-co-methacrylic acid) physically mixed with base insoluble materials such as o,o'-dinitrobenzyl esters. The base insoluble esters decompose upon irradiation to form base soluble entities in the irradiated regions. These irradiated portions are then soluble in basic solutions that are used to develop the desired image.
    Type: Grant
    Filed: April 29, 1983
    Date of Patent: November 5, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Edwin A. Chandross, Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Patent number: 4521274
    Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resist baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as that formed by the condensation of formaldehyde with a silicon-substituted phenol. This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
    Type: Grant
    Filed: May 24, 1984
    Date of Patent: June 4, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Patent number: 4481049
    Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
    Type: Grant
    Filed: March 2, 1984
    Date of Patent: November 6, 1984
    Assignee: AT&T Bell Laboratories
    Inventors: Elsa Reichmanis, Gerald Smolinsky
  • Patent number: 4400461
    Abstract: Photosensitive bodies that are sensitive to ultraviolet radiation and that exhibit excellent contrast are formed from base soluble polymers such as poly(methyl methacrylate-co-methacrylic acid) physically mixed with base insoluble materials such as o-nitrobenzyl esters. The base insoluble esters decompose upon irradiation to form base soluble entities in the irradiated regions. These irradiated portions are then soluble in basic solutions that are used to develop the desired image.
    Type: Grant
    Filed: May 22, 1981
    Date of Patent: August 23, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Edwin A. Chandross, Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Patent number: 4382120
    Abstract: A photolithographic resist with excellent sensitivity for actinic radiation in the short wavelength ultraviolet region is produced from terpolymers of (1) methyl methacrylate, (2) materials such as 3-oximino-2-butanone methacrylate, and (3) compounds such as methacrylonitrile.
    Type: Grant
    Filed: February 10, 1982
    Date of Patent: May 3, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Patent number: 4373018
    Abstract: High-resolution patterning of a device surface is effected by a method which involves the use of a multi-layer resist structure. An organic resist layer is on the surface to be patterned, and an inorganic resist layer is on the organic resist layer. A pattern is produced in the inorganic layer by exposure to actinic radiation and, after development of the inorganic layer, the pattern is replicated in the organic layer by additional exposure to actinic radiation. The pattern is then developed in the organic layer so as to leave exposed surface portions to be affected by a fabrication agent.
    Type: Grant
    Filed: June 5, 1981
    Date of Patent: February 8, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Elsa Reichmanis, Bernard J. Roman, King L. Tai, Cletus W. Wilkins, Jr.
  • Patent number: 4343889
    Abstract: A photolithographic resist with excellent sensitivity for actinic radiation in the short wavelength ultraviolet region is produced from terpolymers of (1) methyl methacrylate, (2) materials such as 3-oximino-2-butanone methacrylate, and (3) compounds such as methacrylonitrile.
    Type: Grant
    Filed: February 19, 1981
    Date of Patent: August 10, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Elsa Reichmanis, Cletus W. Wilkins, Jr.