Abstract: The present invention concerns a method to prepare and purify the ester glyceryl-tris-(3-hydroxy butyrate) of formula (I) and its optically active isomers, in particular the enantiomer (R, R, R).

Abstract: A die has a positional location in a wafer defined by first and second coordinates, the first and second coordinates identifying a respective horizontal and vertical location where the die was formed. An index formed on the die has a first comb structure of a first contiguous arrangement of first dots, and a second comb structure of a second contiguous arrangement of second dots. A first marker at a selected one of the first dots indicates a first digit of the first coordinate, and a first additional marker at a selected one of the first dots indicates a second digit of the first coordinate. A second marker at a selected one of the second dots indicates a first digit of the second coordinate, and a second additional marker at a selected one of the second dots indicates a second digit of the second coordinate.

Abstract: A die has a positional location in a wafer defined by first and second coordinates, the first and second coordinates identifying a respective horizontal and vertical location where the die was formed. An index formed on the die has a first comb structure of a first contiguous arrangement of first dots, and a second comb structure of a second contiguous arrangement of second dots. A first marker at a selected one of the first dots indicates a first digit of the first coordinate, and a first additional marker at a selected one of the first dots indicates a second digit of the first coordinate. A second marker at a selected one of the second dots indicates a first digit of the second coordinate, and a second additional marker at a selected one of the second dots indicates a second digit of the second coordinate.

Abstract: A solution for indexing electronic devices includes corresponding electronic device including a die integrating an electronic circuit, the die having at least one index including a reference defining an ordered alignment of a plurality of locations on the die and a marker for defining a value of the index according to an arrangement of the marker with respect to the reference. In one embodiment, the marker includes a plurality of markers each one arranged at a selected one of the locations, the selected location of the marker defining a value of a digit associated with a corresponding power of a base higher than 2 within a number in a positional notation in the base representing the value of the index.

Abstract: A semiconductor structure includes a semiconductor substrate, formed on which are a first layer and a second layer, and an alignment-control mask. The alignment-control mask includes a first direction reference element, formed in a first region of the first layer and extending in a first alignment direction, and first position reference elements, formed in a first region of the second layer that corresponds to the first region of the first layer accommodating the first direction reference element. The first position reference elements are arranged in succession in the first alignment direction and in respective staggered positions with respect to a second alignment direction perpendicular to the first alignment direction.

Abstract: A semiconductor structure includes a semiconductor substrate, formed on which are a first layer and a second layer, and an alignment-control mask. The alignment-control mask includes a first direction reference element, formed in a first region of the first layer and extending in a first alignment direction, and first position reference elements, formed in a first region of the second layer that corresponds to the first region of the first layer accommodating the first direction reference element. The first position reference elements are arranged in succession in the first alignment direction and in respective staggered positions with respect to a second alignment direction perpendicular to the first alignment direction.

Abstract: A solution for indexing electronic devices includes corresponding electronic device including a die integrating an electronic circuit, the die having at least one index including a reference defining an ordered alignment of a plurality of locations on the die and a marker for defining a value of the index according to an arrangement of the marker with respect to the reference. In one embodiment, the marker includes a plurality of markers each one arranged at a selected one of the locations, the selected location of the marker defining a value of a digit associated with a corresponding power of a base higher than 2 within a number in a positional notation in the base representing the value of the index.

Abstract: In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.

Abstract: In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.

Abstract: In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.

Abstract: In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.