Patents by Inventor Emery Kuo

Emery Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density plasma etchback process for advanced metallization applications
    Patent number: 8431033
    Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: April 30, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park
  • HIGH DENSITY PLASMA ETCHBACK PROCESS FOR ADVANCED METALLIZATION APPLICATIONS
    Publication number: 20120152896
    Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 21, 2012
    Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park