Abstract: A composition, including (A) a medicinal ingredient, (B) a water-insoluble polymer, (C) a non-volatile base, (D) a volatile solvent, and (E) water. The composition has a viscosity at 25° C. of 1.0 mPa·s or more and 10,000 mPa·s or less. The component (A) contains one or more selected from the group consisting of an anti-inflammatory analgesic component, a local irritation component, a blood circulation promoting component, an antihistamine component, a crude drug component, an antipruritic component, a local anesthetic component, a keratin softening component, and an antibacterial component. A mass ratio [(C)/(B)] of the component (C) to the component (B) in the composition is 0.05 or more and 10 or less, and a mass ratio [(E)/(D)] of the component (E) to the component (D) in the composition is 0.005 or more and 1.0 or less.

Abstract: A multi-layer shaped product, comprising a layer composed of an acrylic resin composition comprising a (meth)acrylic resin (A) and an acrylic block copolymer (B) comprising an acrylic acid ester polymer block (a) and a methacrylic acid ester polymer block (b), and if necessary, particles of an acrylic elastomeric polymer (C), and a layer composed of an active energy ray cured resin that is in contact with the layer composed of the acrylic resin composition, wherein an amount of the acrylic block copolymer (B) comprised in the acrylic resin composition is not less than 1 part by mass and not more than 60 parts by mass based on 100 parts by mass of the acrylic resin composition.

Abstract: This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor semiconductor of this invention comprises a source/drain electrode 6 positioned in a predetermined position in a GaAs substrate 1, a channel region provided in the GaAs substrate 1 and between the source/drain electrodes 6, a gate electrode 11 which is in schottky contact with a part of a channel region and is positioned between the source/drain electrodes 6, and an insulating film 7 which electrically insulates a surface of the GaAs substrate and the gate electrode 11 at both side surfaces of the gate electrode 11.

Abstract: This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof.

Abstract: A dummy gate is removed together with an SiO.sub.2 film thereon by lift-off to form a reverse dummy-gate pattern with the SiO.sub.2 film. A photoresist pattern is formed to cover the reverse dummy-gate pattern and an SiN protection film therebetween, and a mesa pattern is formed by mesa etching. The photoresist pattern is etched so that the edge of the photoresist pattern is located between the edge of the mesa pattern and the edge of the reverse dummy-gate pattern and the exposed part of the SiN protection film is etched. The edge of the SiN protection film is thus located inside the edge of the mesa pattern.

Abstract: A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power operation, a third channel layer being provided in the second channel layer or on the second channel layer on the opposite side of the first channel layer. The third channel layer is constituted by at least one semiconductor layer of the one conductivity type or undoped having a greater electron affinity than that of the second channel layer and having a smaller forbidden bandgap than that of the second channel layer. In another field effect semiconductor device, an undoped impurity diffusion preventing layer having an electron affinity approximately equal to that of the second channel layer is provided between the first channel layer and the second channel layer.

Abstract: A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Abstract: A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.