Patents by Inventor Emi Makino

Emi Makino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Equipment and method for manufacturing silicon carbide single crystal
    Patent number: 7217323
    Abstract: A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: May 15, 2007
    Assignee: Denso Corporation
    Inventors: Naohiro Sugiyama, Yasuo Kitou, Emi Makino, Kazukuni Hara, Kouki Futatsuyama, Atsuto Okamoto
  • Equipment and method for manufacturing silicon carbide single crystal
    Publication number: 20040194694
    Abstract: A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
    Type: Application
    Filed: April 1, 2004
    Publication date: October 7, 2004
    Applicant: DENSO CORPORATION
    Inventors: Naohiro Sugiyama, Yasuo Kitou, Emi Makino, Kazukuni Hara, Kouki Futatsuyama, Atsuto Okamoto