Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: A method for manufacturing a semiconductor device, the method including irradiating a laminated body for temporary fixing with light and thereby separating the semiconductor member from a resin layer for temporary fixing. The laminated body for temporary fixing is formed by a method including: laminating a film material for temporary fixing on a light-absorbing layer in a direction in which a first principal surface is in contact with the light-absorbing layer; and peeling off a second release film from the film material for temporary fixing to expose a second principal surface. When the maximum values of logarithmic decrements of the first principal surface and the second principal surface of the resin layer for temporary fixing in rigid pendulum measurement are designated as ?max1 and ?max2, respectively, ?max2 is smaller than ?max1.

Abstract: A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270° C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25° C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

Abstract: A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

Abstract: A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

Abstract: A semiconductor device manufacturing method includes a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with light and thereby separating the semiconductor member from the supporting member. The temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light and a resin cured product layer including a cured product of a curable resin component. The curable resin component includes a hydrocarbon resin, and a storage modulus at 25° C. for the cured product of the curable resin component is 5 to 100 MPa.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: Disclosed is a separation material comprising hydrophobic polymer particles and a coating layer covering at least a portion of a surface of the hydrophobic polymer particles, wherein the coating layer comprises a hydrophilic polymer having hydroxy groups, and the hydrophilic polymer has a group represented by —NH—R-L or an epoxy group, wherein R represents a hydrocarbon group and L represents a carboxy group or an amino group.

Abstract: Disclosed is a separation material comprising: a porous polymer particle containing a crosslinked polymer containing a structural unit derived from a crosslinkable monomer having an aromatic group and two or more vinyl groups bonded to the aromatic group; and a coating layer coating at least part of the surface of the porous polymer. The coating layer contains a first graft chain that is a polymer having a hydroxyl group bonded to the crosslinked polymer, and a second graft chain that is a polymer having a hydroxyl group, bonded to the first graft chain, and being different from the first graft chain.

Abstract: A thermosetting resin composition for an underfilling of a semiconductor comprising, as essential components, a thermosetting resin, a curing agent, a flux agent and two or more inorganic fillers with different mean particle sizes, wherein the inorganic fillers include an inorganic filler with a mean particle size of no greater than 100 nm and an inorganic filler with a mean particle size of greater than 100 nm.

Abstract: A thermosetting resin composition for an underfilling of a semiconductor comprising, as essential components, a thermosetting resin, a curing agent, a flux agent and two or more inorganic fillers with different mean particle sizes, wherein the inorganic fillers include an inorganic filler with a mean particle size of no greater than 100 nm and an inorganic filler with a mean particle size of greater than 100 nm.

Abstract: An epoxy resin composition for a underfilling of a semiconductor comprising an epoxy resin, an acid anhydride, a curing accelerator and a flux agent as essential components, wherein the curing accelerator is a quaternary phosphonium salt, as well as a semiconductor device and manufacturing method employing the same.