Abstract: A positive electrode sheet for air batteries according to an embodiment of this invention comprises a waved fibrous carbon and has a BET method specific surface area in a range of 300 to 1200 m2/g, a 5 to 1000 nm-diameter pore surface area in a range of 200 to 600 m2/g, a 0.1 to 10 ?m-diameter pore volume in a range of more than 2.0 to no more than 10.0 cm3/g, a 2 to 1000 nm-diameter pore volume in a range of 1.0 to 5.0 cm3/g, and a sheet density in a range of 0.05 to 0.23 g/cm3.

Abstract: The present invention relates to a secondary battery electrolyte, which contains a first fluorine-containing ether compound, a second fluorine-containing ether compound, and at least one selected from fluorine-containing phosphate ester compounds and sulfone compounds, wherein the fluorine substitution rate of the first fluorine-containing ether compound is lower than that of the second fluorine-containing ether compound, and the content of the first fluorine-containing ether compound is higher than that of the second fluorine-containing ether compound. According to the present invention, with respect to batteries operating at a high voltage, and batteries supposed to be used at a high temperature for a long period, there can be provided a lithium secondary battery suppressed in the decomposition reaction of the electrolyte and improved in the life characteristics.

Abstract: A negative electrode active material comprising silicon oxide satisfying the following Equation 1 and Equation 2 when solid state NMR (29Si-DDMAS) of silicon is measured for the silicon oxide after performing charging at least once is excellent in the performance as a negative electrode active material for a lithium secondary battery; 0.42?S1/(S1+S2+S3)?0.55??(Equation 1) 0.21?S3/(S1+S2+S3)?0.26,??(Equation 2) in which S1 is a sum of peak areas of a group of signals assigned to Si having a Si—Si bond and having peaks at 0 to ?15 ppm, ?55 ppm, ?84 ppm and ?88 ppm, S2 is a sum of peak areas of a group of signals assigned to Si having a Si(OH)4-n(OSi)n (n=3, 4) structure and having peaks at ?100 ppm and ?120 ppm, and S3 is a sum of peak areas of a group of signals assigned to Si having a Si(OLi)4-n(OSi)n (n=0, 1, 2, 3) structure and having peaks at ?66 ppm, ?74 ppm, ?85 ppm and ?96 ppm.

Abstract: A negative electrode active material comprising silicon oxide satisfying the following Equation 1 and Equation 2 when solid state NMR (29Si-DDMAS) of silicon is measured for the silicon oxide after performing charging at least once is excellent in the performance as a negative electrode active material for a lithium secondary battery; 0.42?S1/(S1+S2+S3)?0.55??(Equation 1) 0.21?S3/(S1+S2+S3)?0.26,??(Equation 2) in which S1 is a sum of peak areas of a group of signals assigned to Si having a Si—Si bond and having peaks at 0 to ?15 ppm, ?55 ppm, ?84 ppm and ?88 ppm, S2 is a sum of peak areas of a group of signals assigned to Si having a Si(OH)4-n(OSi)n (n=3, 4) structure and having peaks at ?100 ppm and ?120 ppm, and S3 is a sum of peak areas of a group of signals assigned to Si having a Si(OLi)4-n(OSi)n (n=0, 1, 2, 3) structure and having peaks at ?66 ppm, ?74 ppm, ?85 ppm and ?96 ppm.

Abstract: The present invention relates to a secondary battery electrolyte, which contains a first fluorine-containing ether compound, a second fluorine-containing ether compound, and at least one selected from fluorine-containing phosphate ester compounds and sulfone compounds, wherein the fluorine substitution rate of the first fluorine-containing ether compound is lower than that of the second fluorine-containing ether compound, and the content of the first fluorine-containing ether compound is higher than that of the second fluorine-containing ether compound. According to the present invention, with respect to batteries operating at a high voltage, and batteries supposed to be used at a high temperature for a long period, there can be provided a lithium secondary battery suppressed in the decomposition reaction of the electrolyte and improved in the life characteristics.

Abstract: A secondary battery according to the present exemplary embodiment is a secondary battery including a laminated electrode body provided with at least one pair of positive and negative electrodes and an outer enclosure that accommodates the laminated electrode body, wherein the outer enclosure includes one or more concave portions, inside a border corresponding to an outer edge of an electrode surface of an outermost layer of the laminated electrode body, on a surface facing the electrode surface, and wherein, when a band-shaped outer circumferential region having an area that is a half of an area inside the border is set inside the border, at least one of the concave portions is located inside the outer circumferential region.

Abstract: A secondary battery according to the present exemplary embodiment is a secondary battery including a laminated electrode body provided with at least one pair of positive and negative electrodes and an outer enclosure that accommodates the laminated electrode body, wherein the outer enclosure includes one or more concave portions, inside a border corresponding to an outer edge of an electrode surface of an outermost layer of the laminated electrode body, on a surface facing the electrode surface, and wherein, when a band-shaped outer circumferential region having an area that is a half of an area inside the border is set inside the border, at least one of the concave portions is located inside the outer circumferential region.

Abstract: The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.

Abstract: The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.