Abstract: This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

Abstract: The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

Abstract: A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.

Abstract: Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. A temperature controller is described within a CMP system. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned to contact a back surface of the processing surface to manage and control processing surface temperature in defined processing zones. A process surface conditioner includes an array of conditioning pucks for conditioning an outer preparation surface. Each of the conditioning pucks of the array is independently controlled.

Abstract: Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. In one example, a temperature controller is described within a CMP system. The CMP system has a first roller and a second roller and a linear belt circulating around the first and second rollers. The linear belt has a width that spans between a first edge and a second edge. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned between the first roller and the second roller and configured to contact a back surface of the linear belt. The array of thermal elements extends between the first edge and the second edge of the linear belt width.

Abstract: Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. In one example, a temperature controller is described within a CMP system. The CMP system has a first roller and a second roller and a linear belt circulating around the first and second rollers. The linear belt has a width that spans between a first edge and a second edge. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned between the first roller and the second roller and configured to contact a back surface of the linear belt. The array of thermal elements extends between the first edge and the second edge of the linear belt width.

Abstract: A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.