Patents by Inventor Emily Lanning

Emily Lanning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure
    Patent number: 7777302
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: August 17, 2010
    Assignee: International Business Machines Corporation
    Inventors: Peter J. Geiss, Joseph R. Greco, Richard S. Kontra, Emily Lanning
  • METHOD OF CONTROLLING GRAIN SIZE IN A POLYSILICON LAYER AND IN SEMICONDUCTOR DEVICES HAVING POLYSILICON STRUCTURE
    Publication number: 20070284694
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Application
    Filed: June 29, 2007
    Publication date: December 13, 2007
    Inventors: Peter Geiss, Joseph Greco, Richard Kontra, Emily Lanning
  • Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
    Patent number: 7247924
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: July 24, 2007
    Assignee: International Business Machines Corporation
    Inventors: Peter J. Geiss, Joseph R. Greco, Richard S. Kontra, Emily Lanning
  • Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
    Publication number: 20040084754
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Application
    Filed: October 28, 2003
    Publication date: May 6, 2004
    Inventors: Peter J. Geiss, Joseph R. Greco, Richard S. Kontra, Emily Lanning
  • Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
    Patent number: 6682992
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: January 27, 2004
    Assignee: International Business Machines Corporation
    Inventors: Peter J. Geiss, Joseph R. Greco, Richard S. Kontra, Emily Lanning
  • Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicone structures
    Publication number: 20030216013
    Abstract: A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
    Type: Application
    Filed: May 15, 2002
    Publication date: November 20, 2003
    Applicant: International Business Machines Corporation
    Inventors: Peter J. Geiss, Joseph R. Greco, Richard S. Kontra, Emily Lanning