Patents by Inventor Emmanuel Dutarde

Emmanuel Dutarde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8022697
    Abstract: This system for measuring an electromagnetic field radiated by an electrical component of an electronic circuit, the electrical component being fixed to a dielectric substrate of the electronic circuit, is wherein a transducer (90 to 95) is etched on the substrate of the electronic circuit.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: September 20, 2011
    Assignee: Alstom Transport SA
    Inventors: Guillaume Lourdel, Emmanuel Dutarde, Jean-Marc Dienot
  • Patent number: 7859079
    Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: December 28, 2010
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Alstom Transport SA
    Inventors: Makoto Kondou, Kiyoshi Arai, Jose Saiz, Pierre Solomalala, Emmanuel Dutarde, Benoit Boursat, Philippe Lasserre
  • Publication number: 20090250781
    Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
    Type: Application
    Filed: April 21, 2009
    Publication date: October 8, 2009
    Applicants: MITSUBISHI DENKI KABUSHIKI KAISHA, ALSTOM TRANSPORT SA
    Inventors: Makoto Kondou, Kiyoshi Arai, Jose Saiz, Pierre Solomalala, Emmanuel Dutarde, Benoit Boursat, Philippe Lasserre
  • Publication number: 20090160438
    Abstract: This system for measuring an electromagnetic field radiated by an electrical component of an electronic circuit, the electrical component being fixed to a dielectric substrate of the electronic circuit, is wherein a transducer (90 to 95) is etched on the substrate of the electronic circuit.
    Type: Application
    Filed: February 27, 2009
    Publication date: June 25, 2009
    Applicant: ALSTOM TRANSPORT SA
    Inventors: Guillaume LOURDEL, Emmanuel DUTARDE, Jean-Marc DIENOT
  • Patent number: 7535076
    Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
    Type: Grant
    Filed: January 6, 2005
    Date of Patent: May 19, 2009
    Assignee: Alstom Transport SA
    Inventors: Makoto Kondou, Kiyoshi Arai, Jose Saiz, Pierre Solomalala, Emmanuel Dutarde, Benoit Boursat, Philippe Lasserre
  • Patent number: 7479693
    Abstract: One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: January 20, 2009
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Alstom Transport SA
    Inventors: Makoto Kondou, Kiyoshi Arai, Jose Saiz, Pierre Solomalala, Emmanuel Dutarde, Benoit Boursat, Philippe Lasserre
  • Patent number: 7170199
    Abstract: A matrix converter for transforming electrical energy between at least one voltage source, in particular a power supply network, and at least one current source, in particular a load, said converter including a matrix of switches connecting said voltage sources to said current sources, wherein each of said switches has two terminals which are interconnected via a photoconductive layer of diamond, each switch being controlled by means of a light source irradiating the layer of diamond interposed between the two terminals of the switch.
    Type: Grant
    Filed: January 8, 2003
    Date of Patent: January 30, 2007
    Assignee: Alstom
    Inventors: Emmanuel Dutarde, Christophe Beuille, Fabrice Breit, Henri Schneider
  • Patent number: 7042725
    Abstract: A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: May 9, 2006
    Assignee: Alstom
    Inventors: Nathalie Martin, Benoit Boursat, Emmanuel Dutarde, Jose Saiz, Jacques Cettour-Rose, Pierre Solomalala
  • Publication number: 20060012386
    Abstract: This system for measuring an electromagnetic field radiated by an electrical component of an electronic circuit, the electrical component being fixed to a dielectric substrate of the electronic circuit, is wherein a transducer (90 to 95) is etched on the substrate of the electronic circuit.
    Type: Application
    Filed: May 13, 2005
    Publication date: January 19, 2006
    Inventors: Guillaume Lourdel, Emmanuel Dutarde, Jean-Marc Dienot
  • Patent number: 6836125
    Abstract: A method of testing a power module including a control gate, an emitter, a collector, at least one power component on a dielectric substrate and a diode connected in antiparallel with the power component measures partial discharges occurring between the emitter and the collector when an alternating current voltage source superimposed on a direct current voltage source is connected between the collector and the emitter of the power module. The voltage Vtest received by the power module between the collector and the emitter verifies at all times the condition Vtest>0 so that the diode never conducts. The power component is maintained in a turned off state during the test by a direct current voltage source connected between the control gate and the emitter.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: December 28, 2004
    Assignee: Alstom
    Inventors: Fabrice Breit, Sorin Dinculescu, Emmanuel Dutarde, Thierry Lebey, José Saiz
  • Publication number: 20040207968
    Abstract: A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.
    Type: Application
    Filed: April 8, 2004
    Publication date: October 21, 2004
    Applicant: ALSTOM
    Inventors: Nathalie Martin, Benoit Boursat, Emmanuel Dutarde, Jose Saiz, Jacques Cettour-Rose, Pierre Solomalala
  • Patent number: 6781854
    Abstract: A matrix converter for transforming electrical energy between at least one voltage source, in particular a power supply network, and at least one current source, in particular a load, said converter including a matrix of switches connecting said voltage sources to said current sources, wherein each of said switches has two terminals disposed in respective distinct parallel planes and a photoconductive diamond substrate interposed between said two terminals of the switch, each switch being controlled by means of a light source irradiating the diamond substrate interposed between the two terminals.
    Type: Grant
    Filed: January 13, 2003
    Date of Patent: August 24, 2004
    Assignee: Alstom
    Inventors: Emmanuel Dutarde, Christophe Beuille, Fabrice Breit, Henri Schneider
  • Publication number: 20030160516
    Abstract: A matrix converter for transforming electrical energy between at least one voltage source, in particular a power supply network, and at least one current source, in particular a load, said converter including a matrix of switches connecting said voltage sources to said current sources, wherein each of said switches has two terminals which are interconnected via a photoconductive layer of diamond, each switch being controlled by means of a light source irradiating the layer of diamond interposed between the two terminals of the switch.
    Type: Application
    Filed: January 8, 2003
    Publication date: August 28, 2003
    Applicant: ALSTOM
    Inventors: Emmanuel Dutarde, Christophe Beuille, Fabrice Breit, Henri Schneider
  • Publication number: 20030156432
    Abstract: A matrix converter for transforming electrical energy between at least one voltage source, in particular a power supply network, and at least one current source, in particular a load, said converter including a matrix of switches connecting said voltage sources to said current sources, wherein each of said switches has two terminals disposed in respective distinct parallel planes and a photoconductive diamond substrate interposed between said two terminals of the switch, each switch being controlled by means of a light source irradiating the diamond substrate interposed between the two terminals.
    Type: Application
    Filed: January 13, 2003
    Publication date: August 21, 2003
    Applicant: ALSTOM
    Inventors: Emmanuel Dutarde, Christophe Beuille, Fabrice Breit, Henri Schneider
  • Patent number: 6586783
    Abstract: An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150 &mgr;m.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: July 1, 2003
    Assignee: Alstom
    Inventors: Benoît Boursat, Emmanuel Dutarde, Nathalie Martin, Pierre Solomalala, José Saiz
  • Publication number: 20030025522
    Abstract: A method of testing a power module including a control gate, an emitter, a collector, at least one power component on a dielectric substrate and a diode connected in antiparallel with the power component measures partial discharges occurring between the emitter and the collector when an alternating current voltage source superimposed on a direct current voltage source is connected between the collector and the emitter of the power module. The voltage Vtest received by the power module between the collector and the emitter verifies at all times the condition Vtest>0 so that the diode never conducts. The power component is maintained in a turned off state during the test by means of a direct current voltage source connected between the control gate and the emitter.
    Type: Application
    Filed: July 23, 2002
    Publication date: February 6, 2003
    Applicant: ALSTOM
    Inventors: Fabrice Breit, Sorin Dinculescu, Emmanuel Dutarde, Thierry Lebey, Jose Saiz
  • Publication number: 20020125505
    Abstract: An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150&mgr;m.
    Type: Application
    Filed: January 31, 2002
    Publication date: September 12, 2002
    Applicant: ALSTOM
    Inventors: Benoit Boursat, Emmanuel Dutarde, Nathalie Martin, Pierre Solomalala, Jose Saiz
  • Publication number: 20020053720
    Abstract: A substrate for an electronic circuit, the substrate comprising a wafer of silicon Si having a top face covered in an electrically insulating layer of silicon nitride SiN, said electrically insulating layer of silicon nitride supporting one or more conductive tracks obtained by metallizing the top face of said electrically insulating layer for the purpose of enabling one or more electronic components to be connected.
    Type: Application
    Filed: September 14, 2001
    Publication date: May 9, 2002
    Applicant: ALSTOM
    Inventors: Benoit Boursat, Emmanuel Dutarde, Luc Meysenc, Jose Saiz, Pierre Solomalala