Patents by Inventor Emmanuel Guidotti
Emmanuel Guidotti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11075057Abstract: A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described.Type: GrantFiled: January 13, 2018Date of Patent: July 27, 2021Assignee: Plasma-Therm LLCInventors: Gilles Baujon, Emmanuel Guidotti, Yannick Pilloux, Patrick Rabinzohn, Julien Richard, Marc Segers, Vincent Girault
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Publication number: 20180158651Abstract: A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described.Type: ApplicationFiled: January 13, 2018Publication date: June 7, 2018Applicant: Plasma-Therm, LLCInventors: Gilles Baujon, Emmanuel Guidotti, Yannick Pilloux, Patrick Rabinzohn, Julien Richard, Marc Segers, Vincent Girault
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Publication number: 20150243485Abstract: A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described.Type: ApplicationFiled: July 22, 2013Publication date: August 27, 2015Applicant: NanoplasInventors: Gilles Baujon, Emmanuel Guidotti, Yannick Pilloux, Patrick Rabinzohn, Julien Richard, Marc Segers, Vincent Girault
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Publication number: 20080003360Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.Type: ApplicationFiled: September 18, 2007Publication date: January 3, 2008Applicants: TOKYO ELECTRON LIMITED, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Fenton McFeely, Sandra Malhotra
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Publication number: 20070032079Abstract: A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C.Type: ApplicationFiled: September 29, 2006Publication date: February 8, 2007Applicant: Tokyo Electron LimitedInventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa
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Publication number: 20060185598Abstract: A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.Type: ApplicationFiled: February 10, 2006Publication date: August 24, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa, Tadahiro Ishizaka
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Publication number: 20060185597Abstract: A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.Type: ApplicationFiled: February 10, 2006Publication date: August 24, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa, Tadahiro Ishizaka
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Publication number: 20060182886Abstract: A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.Type: ApplicationFiled: February 15, 2005Publication date: August 17, 2006Inventors: Emmanuel Guidotti, Kenji Suzuki, Gerrit Leusink, Fenton McFeely
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Publication number: 20060112882Abstract: A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.Type: ApplicationFiled: November 29, 2004Publication date: June 1, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa
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Publication number: 20060112883Abstract: A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system is configured to be coupled to the process chamber of a thin film deposition system, and it includes a base tray with one or more stackable upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.Type: ApplicationFiled: December 9, 2004Publication date: June 1, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa
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Publication number: 20060115593Abstract: In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.Type: ApplicationFiled: December 9, 2004Publication date: June 1, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Masamichi Hara, Daisuke Kuroiwa, Sandra Malhotra, Fenton McFeely, Robert Young
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Publication number: 20060110530Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.Type: ApplicationFiled: November 23, 2004Publication date: May 25, 2006Inventors: Kenji Suzuki, Emmanuel Guidotti, Gerrit Leusink, Fenton McFeely, Sandra Malhotra
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Publication number: 20060068588Abstract: A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.Type: ApplicationFiled: September 30, 2004Publication date: March 30, 2006Applicants: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Kenji Suzuki, Emmanuel Guidotti, Enrico Mosca, Gert Leusink, Yumiko Kawano, Fenton McFeely, Sandra Malhotra
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Patent number: 6992011Abstract: A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber of a semiconductor wafer processing apparatus and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and SiO2 contaminants or CFx contaminants are cleaned from a silicon contact prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.Type: GrantFiled: January 15, 2003Date of Patent: January 31, 2006Assignee: Tokyo Electron LimitedInventors: Takenao Nemoto, Emmanuel Guidotti, Gert Leusink
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Publication number: 20050279384Abstract: A method and system for controlling an exothermic chamber cleaning process in a process chamber. The method includes exposing a system component to a cleaning gas in the chamber cleaning process to remove a material deposit from the system component, monitoring at least one temperature-related system component parameter in the chamber cleaning process, determining the cleaning status of the system component from the monitoring, and based upon the status from the determining, performing one of the following: (a) continuing the exposing and monitoring, or (b) stopping the process.Type: ApplicationFiled: June 17, 2004Publication date: December 22, 2005Inventor: Emmanuel Guidotti
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Publication number: 20040137750Abstract: A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber of a semiconductor wafer processing apparatus and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and SiO2 contaminants or CFx contaminants are cleaned from a silicon contact prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.Type: ApplicationFiled: January 15, 2003Publication date: July 15, 2004Applicant: Tokyo Electron LimitedInventors: Takenao Nemoto, Emmanuel Guidotti, Gert Leusink
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Patent number: 6121140Abstract: A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.Type: GrantFiled: October 9, 1997Date of Patent: September 19, 2000Assignee: Tokyo Electron LimitedInventors: Chantal Arena, Ronald T. Bertram, Emmanuel Guidotti, Joseph T. Hillman
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Patent number: 6090705Abstract: A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate surface. A susceptor in a reaction chamber is exposed to a plasma. A substrate contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge and non-edge surfaces. A plurality of substrates may be processed before reexposing the susceptor to the plasma.Type: GrantFiled: January 20, 1998Date of Patent: July 18, 2000Assignee: Tokyo Electron LimitedInventors: Chantal Arena, Ronald T. Bertram, Emmanuel Guidotti, Joseph T. Hillman