Abstract: A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam “on” and beam “off” states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.

Abstract: A charged particle source includes a vessel defining an interior for containing a plasma, the vessel having an inlet communicating with the interior of the vessel and connected to a source of atoms, and an aperture through which a charged particle beam is discharged, an energy generator for communicating with the atoms in the interior of the vessel and effecting ionization of the atoms in the vessel and creating the plasma, an electrode assembly disposed in the interior of the vessel, the electrode assembly including a conductive electrode support member, a tray member associated with the support member, a conductive liquid disposed in the tray member, the liquid having a surface area and a conductor connected between the conductive liquid and a voltage source, and an ion optics assembly disposed adjacent the vessel for accelerating plasma-generated charged particles having the same polarity as the conductive liquid in the vessel while maintaining charged particles of the opposite polarity within the vessel.

Abstract: A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam "on" and beam "off" states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.

Abstract: A charged particle source applicable for etching, thin film deposition, or surface modification includes a conductive electrode for controlling the plasma potential and beam voltage, the electrode retaining long term conductivity during operation, such as by shielding or in situ cleaning during operation, and/or by being operated in pulse mode conditions capable of preventing charge accumulation in the source during ion extraction.

Abstract: A loading station receives a substrate into a load-lock volume pressure isolated from a loading station chamber which is open to a processing chamber. The volume is evacuated and the substrate lowered into the loading chamber. A transport arm moves the substrate from the loading station to a substrate carrier of a cooling fixture within the processing chamber. The carrier is connected to a clamp which together move vertically downward to lower the wafer onto a substrate seat of the fixture. During substrate processing the fixture is tiltable and rotatable and provides substrate cooling by solid-to-solid conduction, forced convection and free convection.Solid-to-solid conduction is provided by the clamp. The substrate is pressed to the fixture by the cooling clamp having a circulating cooling fluid.